Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, an integrated circuit includes a first transistor structure that includes an etch-stop material layer, a first workfunction material layer disposed over the etch-stop material layer, a second workfunction material layer disposed over the first workfunction material layer, and a metal fill material disposed over the second workfunction material layer. The integrated circuit further includes a second transistor structure that includes a layer of the etch-stop material, a layer of the second workfunction material disposed over the etch-stop material layer, and a layer of the metal fill material disposed over the second workfunction material layer. Still further, the integrated circuit includes a resistor structure that includes a layer of the etch-stop material, a layer of the metal fill material disposed over the etch-stop material layer, and a silicon material layer disposed over the metal fill material layer.
1. A method for fabricating an integrated circuit comprising the steps of:
providing a semiconductor substrate having formed thereon first, second, and third sacrificial silicon regions, each of the first, second, and third sacrificial silicon regions having sidewall spacer structures formed along sides thereof, wherein the third sacrificial silicon region has a width that is greater than either a width of the first sacrificial silicon region or a width of the second sacrificial silicon region;
removing the first, second, and third sacrificial silicon regions to form first, second, and third trenches between the sidewall spacer structures of each of the first, second, and third sacrificial silicon regions, respectively;
depositing an etch-stop layer and a first workfunction material layer within the first, second, and third trenches and over the semiconductor substrate;
removing the first workfunction material layer from within the first trench to expose the etch-stop layer in the first trench and leaving the first workfunction material layer in the second and third trenches;
depositing a second workfunction material layer within the first trench and over the etch-stop layer in the first trench, and within the second and third trenches and over the first workfunction material layer in the second and third trenches;
removing the first and second workfunction material layers from within the third trench to expose the etch-stop layer in the third trench, leaving the first and second workfunction material layers in the second trench, and leaving the second workfunction material layer in the first trench;
depositing a metal fill material within the first and second trenches and over the second workfunction material layer in the first and second trenches, and within the third trench over the etch-stop layer in the third trench, wherein the metal fill material is deposited to a thickness such that the first and second trenches are completely filled with the metal fill material, but the third trench is not completely filled with the metal fill material; and
depositing a silicon material layer within the third trench.
2. The method of claim 1 , wherein the first, second, and third sacrificial silicon regions comprise a polysilicon material.
3. The method of claim 1 , wherein the etch-stop layer comprises a tantalum nitride material.
4. The method of claim 1 , wherein the first workfunction material layer comprises an n-type workfunction material.
5. The method of claim 4 , wherein the n-type workfunction material comprises an aluminum material.
6. The method of claim 1 , wherein the second workfunction material layer comprises a p-type workfunction material.
7. The method of claim 6 , wherein the p-type workfunction material comprises a titanium nitride material.
8. The method of claim 1 , wherein the metal fill material comprises an aluminum material.
9. The method of claim 1 , further comprising depositing a second metal fill material in the third trench prior to depositing the silicon material layer.
10. The method of claim 9 , wherein the second metal fill material comprises an aluminum material.
11. The method of claim 9 , further comprising depositing a titanium nitride liner prior to depositing the second metal fill material.
12. The method of claim 1 , further comprising depositing a titanium nitride liner prior to depositing the silicon material layer.
13. The method of claim 1 , wherein the silicon material layer comprises a polysilicon material or an amorphous silicon material.
14. The method of claim 1 , wherein the semiconductor substrate further comprises a fourth sacrificial silicon region having sidewall spacer structures formed along sides thereof, wherein the fourth sacrificial silicon region has a width that is greater than either the width of the first sacrificial silicon region or the width of the second sacrificial silicon region, and wherein the method further comprises:
removing the fourth sacrificial silicon region to form a fourth trench between the sidewall spacer structures along the fourth sacrificial silicon region;
depositing the etch-stop layer within the fourth trench and over the semiconductor substrate;
depositing the first workfunction material layer within the fourth trench and over the etch-stop layer;
depositing the second workfunction material layer within the fourth trench and over the first workfunction material layer in the fourth trench;
removing the first and second workfunction material layers from within the fourth trench;
depositing the metal fill material within the fourth trench over the etch-stop layer in the fourth trench, wherein the fourth trench is not completely filled with the metal fill material;
depositing the silicon material layer within the fourth trench;
removing the silicon material from the fourth trench, and leaving the silicon material in the third trench;
depositing a second metal fill material within the fourth trench over the metal fill material; and
depositing a second silicon material layer within the fourth trench.
15. The method of claim 1 , wherein the semiconductor substrate further comprises a fourth sacrificial silicon region having sidewall spacer structures formed along sides thereof, wherein the fourth sacrificial silicon region has a width that is greater than either the width of the first sacrificial silicon region or the width of the second sacrificial silicon region, and wherein the method further comprises:
removing the fourth sacrificial silicon region to form a fourth trench between the sidewall spacer structures along the fourth sacrificial silicon region;
depositing the etch-stop layer within the fourth trench and over the semiconductor substrate;
depositing the first workfunction material layer within the fourth trench and over the etch-stop layer;
depositing the second workfunction material layer within the fourth trench and over the first workfunction material layer in the fourth trench;
removing the first and second workfunction material layers from within the fourth trench;
depositing the metal fill material within the fourth trench over the etch-stop layer in the fourth trench, wherein the fourth trench is not completely filled with the metal fill material; and
depositing the silicon material layer within the fourth trench; and
siliciding the silicon material layer in the fourth trench, while not siliciding the silicon material layer in the third trench.