Fe-Pt-based sputtering target with dispersed C grains
View Patent ↗A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe 100-x —Pt x ) 100-A —C A (provided A is a number which satisfies 20≤A≤50 and X is a number which satisfies 35≤X≤55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.
1. A sputtering target, comprising a sintered compact having a composition expressed by a formula of (Fe 100-x —Pt x ) 100-A —C A where A and X are numerals in units of atomic percent satisfying respectively 20≤A≤50 and 35≤X≤55, wherein C grains are finely dispersed within a Fe—Pt matrix alloy of the sintered compact, the C grains in a polished surface of the sputtering target have a mean area of 4 μm 2 or less, and the sintered compact has an oxygen content of 600 wtppm or less and a relative density of 90% or higher.
2. The sputtering target according to claim 1 , wherein the C grains are made of graphite.
3. The sputtering target according to claim 2 , wherein the sintered compact contains an oxide of one or more elements selected from the group consisting of B, Mg, Al, Si, Ti, Cr, Zr, Nb, and Ta in an amount of 20 mol % or less that is finely dispersed in the Fe—Pt matrix alloy of the sintered compact.
4. The sputtering target according to claim 1 , wherein the sintered compact contains an oxide of one or more elements selected from the group consisting of B, Mg, Al, Si, Ti, Cr, Zr, Nb, and Ta in an amount of 20 mol % or less that is finely dispersed in the Fe—Pt matrix alloy of the sintered compact.
5. A sputtering target, comprising a sintered compact having a composition expressed by a formula of (Fe 100-x —Pt x ) 100-A —C A where A, X, and Y are numerals in units of atomic percent satisfying respectively 20≤A≤50, 35≤X≤55, and 0.5≤Y≤15, wherein C grains are finely dispersed within a Fe—Pt—Cu matrix alloy of the sintered compact, the C grains in a polished surface of the sputtering target have a mean area of 4 μm 2 or less, and the sintered compact has an oxygen content of 600 wtppm or less and a relative density of 90% or higher.
6. The sputtering target according to claim 5 , wherein the C grains are made of graphite.
7. The sputtering target according to claim 6 , wherein the sintered compact contains an oxide of one or more elements selected from the group consisting of B, Mg, Al, Si, Ti, Cr, Zr, Nb, and Ta in an amount of 20 mol % or less that is finely dispersed in the Fe—Pt—Cu matrix alloy of the sintered compact.
8. The sputtering target according to claim 5 , wherein the sintered compact contains an oxide of one or more elements selected from the group consisting of B, Mg, Al, Si, Ti, Cr, Zr, Nb, and Ta in an amount of 20 mol % or less that is finely dispersed in the Fe—Pt—Cu matrix alloy of the sintered compact.