Methods for temporary bussing of semiconductor package substrates
View Patent ↗Methods for temporary bussing of semiconductor package substrates are disclosed and may include metal plating regions of a packaging substrate utilizing a plurality of bussed traces, which may be decoupled by forming debuss holes at intersections of the bussed traces. The decoupled traces may then be electrically tested, and the packaging substrate may be singulated into a plurality of substrates utilizing a sawing process through singulation areas in the packaging substrate. The traces may be electrically coupled via plating bars in the substrate. The plating bars may be located in the singulation areas. The intersections of the bussed traces may be in a Y pattern, which may be repeated along the singulation areas. The debuss holes may be formed utilizing mechanical drilling or lasing. The regions of the packaging substrate may be metal plated utilizing an electroplating process. The plurality of bussed traces may be biased for the electroplating process.
1. A method for semiconductor packaging, the method comprising:
metal plating regions of a packaging substrate utilizing a plurality of bussed traces of said packaging substrate; and
decoupling the bussed traces after said metal plating by mechanically drilling individual debuss holes through intersections of said bussed traces and said packaging substrate
prior to any elongate cutting extending along saw streets of the packaging substrate.
2. The method according to claim 1 , wherein said bussed traces are electrically coupled via one or more plating bars in said packaging substrate.
3. The method according to claim 2 , wherein said plating bars are located in singulation areas used in a sawing process for singulating the packaging substrate into a plurality of substrates.
4. The method according to claim 1 , wherein said debuss holes are formed at intersections of said bussed traces that are in a Y pattern.
5. The method according to claim 4 , wherein said Y pattern is repeated along singulation areas used in a sawing process for singulating the packaging substrate into a plurality of substrates.
6. The method according to claim 1 , comprising electrically testing the decoupled traces for continuity.
7. The method according to claim 1 , wherein said mechanically drilling said debuss holes comprises drilling with a drill bit.
8. The method according to claim 1 , comprising metal plating said regions of said packaging substrate utilizing an electroplating process.
9. The method according to claim 8 , comprising biasing said plurality of bussed traces for said electroplating process.
10. The method according to claim 1 , wherein said debuss holes are located in singulation areas used in a sawing process for singulating the packaging substrate into a plurality of substrates.
11. A method for semiconductor packaging, the method comprising:
metal plating regions of a pair of substrates on a substrate panel utilizing a plurality of bussed traces of said pair of substrates; and
decoupling the bussed traces after said metal plating by mechanically drilling debuss holes through said bussed traces and said packaging substrate
prior to any elongate cutting along a saw street between the pair of substrates, wherein the drilling results in multiple individual semicircular notches at adjacent edges of each of the pair of substrates.
12. The method according to claim 11 , wherein said bussed traces are electrically coupled via one or more plating bars in said pair of substrates.
13. The method according to claim 12 , wherein said plating bars are located in singulation areas.
14. The method according to claim 11 , wherein said debuss holes are formed at intersections of said bussed traces that are in a Y pattern.
15. The method according to claim 14 , wherein said Y pattern is repeated along singulation areas used in a sawing process for singulating the substrate panel into said pair of substrates.
16. The method according to claim 11 , comprising electrically testing the decoupled traces for continuity.
17. The method according to claim 11 , comprising metal plating said regions of said pair of substrates utilizing an electroplating process.
18. The method according to claim 17 , comprising biasing said plurality of bussed traces for said electroplating process.
19. The method according to claim 11 , wherein said debuss holes are located in singulation areas used in a sawing process for singulating the substrate panel into said pair of substrates.
20. A method for semiconductor packaging, the method comprising:
providing a semiconductor device on a surface of a packaging substrate of a panel, the panel comprising:
regions plated utilizing bussed traces; and
debuss holes through intersections of said bussed traces, the debuss holes located at a first perimeter side of the packaging substrate;
and
singulating the packaging substrate from the panel to expose a sidewall along the first perimeter side, the sidewall having semicircular notches and thereby being discontinuous.
21. The method according to claim 1 , wherein the debuss holes each comprise a circular perimeter at a surface of the packaging substrate.
22. The method according to claim 11 , wherein the debuss holes each comprise a circular perimeter at a surface of the packaging substrate.