Liquid crystal display device
A liquid crystal display device includes a TFT substrate with gate lines and drain lines, and pixel electrodes each formed in a region surrounded by the gate lines and drain lines. Protrusions are formed below the gate lines, each of the protrusions having an upper surface and at least one inclined side surface. A gate insulating film is formed over the gate lines, a semiconductor layer formed on the gate insulating film, and drain electrodes formed and source electrodes formed over the semiconductor layer. Channel portions are defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of one of the protrusions, the pixel and source electrode being in contact with each other on at least one inclined side surface of the protrusion.
1. A liquid crystal display device comprising:
a TFT substrate;
gate lines formed over the TFT substrate;
drain lines formed over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
protrusions formed below the gate lines, each of the protrusions having an upper surface and at least one inclined side surface;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer; and
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of one of the protrusion;
wherein the pixel electrode and the source electrode are in contact with each other on at least one of the at least one inclined side surface of the protrusion.
2. A liquid crystal display device according to claim 1 , wherein an interlayer insulating film, and comb-shaped counter electrodes are formed on the insulating film.
3. A liquid crystal display device according to claim 1 , further comprising a counter substrate opposed to the TFT substrate by way of a liquid crystal layer and a counter electrode formed to the counter substrate.
4. A liquid crystal display device comprising:
a TFT substrate;
gate lines formed over the TFT substrate;
drain lines formed over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
protrusions formed below the gate line, each of the protrusions having an upper surface and at least one inclined side surface;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer;
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surfaces of the protrusion; and
an inorganic passivation film formed over the source electrode;
wherein one of the pixel electrodes is formed on at least one of the at least one inclined side surface and the upper surface of the protrusion, and the pixel electrode is connected with the source electrode by way of a through hole formed in the organic passivation film above the upper surface of the protrusion.
5. A liquid crystal display device according to claim 4 , wherein an interlayer insulating film, and comb-shaped counter electrodes are formed on the interlayer insulating film.
6. A liquid crystal display device according to claim 4 , further comprising a counter substrate opposed to the TFT substrate by way of a liquid crystal layer and a counter electrode formed to the counter substrate.
7. A liquid crystal display device comprising:
a TFT substrate;
gate lines formed over the TFT substrate;
drain lines formed over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
banks formed continuously below the gate lines, each of the banks having an upper surface and at least one inclined side surface;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed over the semiconductor layer;
source electrodes formed over the semiconductor layer; and
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of the bank;
wherein one of the pixel electrode and the source electrode are in contact with each other on at least one of the at least one inclined side surface of the bank.
8. A liquid crystal display device comprising:
a TFT substrate;
gate lines formed over the TFT substrate;
drain lines formed over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
banks formed below the gate lines, each of the banks having an upper surface and at least one inclined side surface;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer;
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of the bank; and
an inorganic passivation film formed over the source electrode;
wherein one of the pixel electrodes is formed on at least one of the at least one inclined side surface and the upper surface of the bank, and the pixel electrode is connected with the source electrode by way of a through hole formed in the organic passivation film above the upper surface of the bank.