Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.
1. A method for forming a dielectric film on a substrate by plasma-assisted deposition, comprising:
introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and
applying RF power in pulses to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction, said RF power comprised of pulses of high-frequency RF power having a frequency of about 10 MHz to about 30 MHz and pulses of low-frequency RF power having a frequency of about 200 kHz to about 1MHz, wherein the pulses of high-frequency RF power, which is pulsed in cycles, and the pulses of low-frequency RF power, which is pulsed in cycles, overlap and are synchronized, wherein a cycle duration including each pulse of high-frequency RF power and a cycle duration including each pulse of low-frequency RF power are in a range of approximately 0.1 milliseconds to approximately 10 milliseconds,
each pulse of high-frequency RF power being composed of a plurality of cycles defined by the frequency, each pulse of low-frequency RF power being composed of a plurality of cycles defined by the frequency, wherein a duty ratio of each cycle of the plurality of cycles constituting each pulse of high-frequency RF power and a duty ratio of each cycle of the plurality of cycles constituting each pulse of low-frequency RF power are 75% or less.
2. The method according to claim 1 , wherein a ratio of the high-frequency RF power to the low-frequency RF power is approximately 0.4 to approximately 2.4.
3. The method according to claim 1 , wherein the recesses have an aspect ratio of approximately 0.5 to approximately 5.
4. The method according to claim 1 , wherein the process gas is introduced to the reaction space continuously.
5. The method according to claim 1 , wherein the process gas comprises a Si-containing precursor and an additive gas.
6. The method according to claim 5 , wherein the Si-containing gas is silane or TEOS.
7. The method according to claim 5 , wherein the additive gas is at least one gas selected from the group consisting of N 2 , H 2 , O 2 , NH 3 , CH 3 , CO, C 2 H 6 , CO 2 , N 2 O, Ar He, and Xe.
8. The method according to claim 1 , wherein the dielectric film is constituted by silicon oxide.
9. The method according to claim 1 , wherein the dielectric film constitutes air gap structures in the patterned recesses.
10. The method according to claim 9 , wherein the dielectric film has a thickness of approximately 10 nm to approximately 1000 nm.
11. The method according to claim 9 , wherein the dielectric film is formed as an initial film, and the method further comprises forming a cap film on the initial film by introducing a Si-containing process gas to the reaction space, and applying RF power continuously to the process gas in the reaction space.
12. The method according to claim 11 , wherein the Si-containing process gas for the cap film is the same as the Si-containing process gas for the initial film.
13. The method according to claim 11 , wherein the step of forming the initial film and the step of forming the cap film are conducted continuously.
14. The method according to claim 1 , wherein the plasma-assisted deposition is plasma-enhanced chemical vapor deposition.
15. The method according to claim 1 , wherein the duty ratio of each cycle of the pulses of high-frequency RF power and the duty ratio of each cycle of the pulses of low-frequency RF power are about 10% to about 50%.