Organoaminodisilane precursors and methods for depositing films comprising same
View Patent ↗Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein R 1 and R 3 are independently selected from linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing and a C 6 to C 10 aryl group; R 2 and R 4 are independently selected from hydrogen, a linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing, and a C 6 to C 10 aryl group; and wherein any one, all, or none of R 1 and R 2 , R 3 and R 4 , R 1 and R 3 , or R 2 and R 4 are linked to form a ring.
1. A precursor for forming a silicon containing film comprising at least one organoaminodisilane selected from the group consisting of phenylethylaminodisilane and 1,2-bis(2,6-dimethylpiperidino)disilane, wherein the organoaminodisilane is produced by reacting 1,2-dichlorodisilane with at least one amine; and wherein the organoaminodisilane is greater than about 98% pure and comprises less than about 2% bis-disilane by-product.
2. The precursor of claim 1 further comprising at least one nitrogen source wherein the at least one organoaminodisilane and the nitrogen-containing source react to provide the silicon-containing film.
3. The precursor of claim 2 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof.
4. The precursor of claim 2 wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.
5. The precursor of claim 1 further comprising at least one oxygen-containing source wherein the at least one oxygen-containing source reacts with the organoaminodisilane to provide the silicon containing film.
6. The precursor of claim 1 wherein the precursor is within a vessel.
7. The precursor of claim 6 wherein the vessel is comprised of stainless steel.
8. The precursor of claim 1 wherein the organoaminodisilane is produced by reacting 1,2-dihalodisilane having a formula XSiH 2 SiH 2 X wherein X=CI, Br, or I, with at least one amine and has less than about 2% bis-disilane products.
9. The precursor of claim 1 wherein the organoaminodisilane is produced by reacting disilane with secondary amine in presence of catalyst.
10. A precursor comprising phenylethylaminodisilane.
11. The precursor of claim 10 further comprising at least one nitrogen source wherein the phenylethylaminodisilane and the nitrogen-containing source react to provide the silicon-containing film.
12. The precursor of claim 10 further comprising at least one oxygen-containing source wherein the at least one oxygen-containing source reacts with the phenylethylaminodisilane to provide the silicon containing film.
13. A precursor comprising 1,2-bis(2,6-dimethylpiperidino)disilane.
14. The precursor of claim 13 further comprising at least one nitrogen source wherein the 1,2-bis(2,6-dimethylpiperidino)disilane and the nitrogen-containing source react to provide the silicon-containing film.
15. The precursor of claim 13 further comprising at least one oxygen-containing source wherein the at least one oxygen-containing source reacts with the 1,2-bis(2,6-dimethylpiperidino)disilane to provide the silicon containing film.
16. A composition comprising:
(a) 1,2-bis(2,6-dimethylpiperidino)disilane having a purity of greater than about 98%; and
(b) a solvent wherein the solvent has a boiling point and the difference between the boiling point of the solvent and a boiling point of the organoaminodisilane is 40° C. or less.
17. The composition of claim 16 wherein the solvent comprises at least one selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.