Method of forming a high thermal conducting semiconductor device package
View Patent ↗A semiconductor device package ( 100 ) includes a heat spreader ( 503 ) formed by depositing a first thin film layer ( 301 ) of a first metal on a top surface ( 150 ) of a die ( 110 ) and to exposed portions of a top surface of an encapsulant ( 208 ), depositing a second thin film layer ( 402 ) of a second metal on a top surface of the first thin film layer, and depositing a third layer ( 503 ) of a third metal on a top surface of the second thin film layer.
1. A method, comprising:
attaching a semiconductor die to a package substrate;
forming wire bonds between the die and the package substrate;
encapsulating the wire bonds with an encapsulant, wherein the encapsulant is configured to expose a top surface of the die; and
forming a heat spreader by:
depositing, by one of physical vapor deposition and chemical vapor deposition, a first thin film layer of a first metal over the top surface of the die and over exposed portions of a top surface of the encapsulant,
depositing a second metal-containing layer over a top surface of the first thin film layer, and
depositing a third metal-containing layer over a top surface of the second metal-containing layer.
2. The method of claim 1 , wherein
the second metal-containing layer is a second thin film layer of a second metal that is deposited by one of physical vapor deposition and chemical vapor deposition, and
the third metal-containing layer is a third layer of a third metal that is deposited by one of electroplating and electroless plating.
3. The method of claim 2 , wherein the first metal includes one of platinum, silver, copper, gold, aluminum, nickel, palladium, chromium, tungsten, a titanium-tungsten alloy, a copper-tungsten alloy, cadmium, boron, tungsten carbide, tungsten disilicide, tungsten disulfide and tungsten oxide.
4. The method of claim 3 , wherein the first thin film layer has a thickness of 100 Å to 10,000 Å.
5. The method of claim 2 , wherein the second thin film layer is deposited by sputtering.
6. The method of claim 2 , wherein the second metal includes one of copper, gold, aluminum and silver.
7. The method of claim 6 , wherein the second thin film layer has a thickness of 100 Å to 10,000 Å.
8. The method of claim 2 , wherein the third metal includes one of copper, gold, aluminum and silver.
9. The method of claim 8 , wherein the third metal-containing layer has a thickness of 5μ to 500μ.
10. The method of claim 1 , wherein the step of encapsulating configures the encapsulant by forming a cavity above the die during film-assisted molding using a mold chase that is modified such that encapsulant is not applied above the top surface of the die.
11. A method, comprising:
attaching a semiconductor die to a package substrate;
forming wire bonds between the die and the package substrate;
encapsulating the wire bonds with an encapsulant, wherein the encapsulant is configured to expose a top surface of the die; and
forming a heat spreader by:
depositing, by sputtering, a first thin film layer of a first metal over the top surface of the die and over exposed portions of a top surface of the encapsulant,
depositing, by one of physical vapor deposition and chemical vapor deposition, a second thin film layer of a second metal over a top surface of the first thin film layer, and
depositing a third metal-containing layer of a third metal over a top surface of the second thin film layer.
12. The method of claim 11 , wherein
the third metal-containing layer is deposited by one of electroplating and electroless plating.
13. The method of claim 11 , wherein the first metal includes one of platinum, silver, copper, gold, aluminum, nickel, palladium, chromium, tungsten, a titanium-tungsten alloy, a copper-tungsten alloy, cadmium, boron, tungsten carbide, tungsten disilicide, tungsten disulfide and tungsten oxide.
14. The method of claim 13 , wherein the first thin film layer has a thickness of 100 Å to 10,000 Å.
15. The method of claim 11 , wherein the second metal includes one of copper, gold, aluminum and silver.
16. The method of claim 15 , wherein the second thin film layer has a thickness of 100 Å to 10,000 Å.
17. The method of claim 11 , wherein the third metal includes one of copper, gold, aluminum and silver.
18. The method of claim 17 , wherein the third metal-containing layer has a thickness of 5μ to 500μ.
19. A method, comprising:
attaching a semiconductor die to a package substrate;
forming wire bonds between the die and the package substrate;
encapsulating the wire bonds with an encapsulant, wherein the encapsulant is configured to expose a top surface of the die; and
forming a heat spreader by:
depositing, by one of physical vapor deposition and chemical vapor deposition, a first thin film layer of a first metal over the top surface of the die and over exposed portions of a top surface of the encapsulant,
depositing, by one of physical vapor deposition and chemical vapor deposition, a second thin film layer of a second metal over a top surface of the first thin film layer, and
depositing a third metal-containing layer of a third metal over a top surface of the second thin film layer.
20. The method of claim 19 , wherein
the third metal-containing layer is deposited by one of electroplating and electroless plating.