Robust pillar structure for semicondcutor device contacts
View Patent ↗Methods and systems for a robust pillar structure for a semiconductor device contacts are disclosed, and may include processing a semiconductor wafer comprising one or more metal pads, wherein the processing may comprise: forming a second metal contact on the one or more metal pads; forming a pillar on the second metal contact, and forming a solder bump on the second metal contact and the pillar, wherein the pillar extends into the solder bump. The second metal contact may comprise a stepped mushroom shaped bump, a sloped mushroom shaped bump, a cylindrical post, and/or a redistribution layer. The semiconductor wafer may comprise silicon. A solder brace layer may be formed around the second metal contact. The second metal contact may be tapered down to a smaller area at the one or more metal pads on the semiconductor wafer. A seed layer may be formed between the second metal contact and the one or more metal pads on the semiconductor wafer. The pillar may comprise copper.
1. A method for forming a semiconductor contact, the method comprising:
processing a semiconductor wafer comprising a metal pad, wherein said processing comprises:
forming a metal contact on the metal pad;
forming a pillar on the metal contact, wherein the pillar is tapered down such that its width decreases toward the metal contact and wherein the metal contact comprises a sloped mushroom shaped bump or a stepped mushroom shaped bump; and
forming a solder bump on the metal contact and the pillar, wherein the pillar extends into the solder bump.
2. The method according to claim 1 , wherein the metal contact comprises the stepped mushroom shaped bump.
3. The method according to claim 1 , wherein the metal contact comprises the sloped mushroom shaped bump.
4. The method according to claim 1 , wherein the metal contact comprises a cylindrical post.
5. The method according to claim 1 , comprising forming a solder brace layer around the metal contact.
6. The method according to claim 1 , wherein the metal contact is tapered down to a smaller area at the metal pad.
7. The method according to claim 1 , comprising forming a seed layer between the metal contact and the metal pad.
8. The method according to claim 1 , wherein the pillar comprises copper.
9. An electronic device comprising:
a semiconductor die comprising a metal pad;
a metal contact formed on the metal pad; and
a pillar formed on the metal contact, wherein the pillar extends into a solder bump also formed on the metal contact and is tapered down such that its width decreases toward the metal contact and wherein the metal contact comprises a sloped mushroom shaped bump or a stepped mushroom shaped bump.
10. The device according to claim 9 , wherein the metal contact comprises the stepped mushroom shaped bump.
11. The device according to claim 9 , wherein the metal contact comprises the sloped mushroom shaped bump.
12. The device according to claim 9 , wherein the metal contact comprises a cylindrical post.
13. The device according to claim 9 , comprising a solder brace layer around the metal contact.
14. The device according to claim 9 , wherein the metal contact is tapered down to a smaller area at the metal pad on the semiconductor die.
15. The device according to claim 9 , comprising a seed layer between the metal contact and the metal pad on the semiconductor die.
16. A device for providing electrical contact, the device comprising:
a semiconductor die comprising a metal pad;
a mushroom shaped contact formed on the metal pad; and
a copper pillar formed on the mushroom shaped contact, wherein the copper pillar extends into a solder bump also formed on the mushroom shaped contact and the copper pillar is wider at a top surface that is in contact with the solder bump than at a bottom surface.
17. A method for forming a semiconductor contact, the method comprising:
processing a semiconductor wafer comprising a metal pad, wherein said processing comprises:
forming a metal contact on the metal pad, wherein the metal contact comprises at least one of a stepped mushroom shaped bump or a sloped mushroom shaped bump;
forming a pillar on the metal contact, and
forming a solder bump on the metal contact and the pillar, wherein the pillar extends into the solder bump.
18. An electronic device comprising:
a semiconductor die comprising a metal pad;
a metal contact formed on the metal pad, wherein the metal contact comprises at least one of a stepped mushroom shaped bump or a sloped mushroom shaped bump; and
a pillar formed on the metal contact, wherein the pillar extends into a solder bump also formed on the metal contact.
19. The method according to claim 17 , wherein the metal contact comprises the stepped mushroom shaped bump.
20. The method according to claim 17 , wherein the metal contact comprises the sloped mushroom shaped bump.
21. The electronic device according to claim 18 , wherein the metal contact comprises the stepped mushroom shaped bump.
22. The electronic device according to claim 18 , wherein the metal contact comprises the sloped mushroom shaped bump.