Lead frame ball grid array with traces under die
A package includes a first plated area, a second plated area, a die attached to the first plated area, and a bond coupling the die to the second plated area. The package further includes a molding encapsulating the die, the bond, and the top surfaces of the first and second plated areas, such that the bottom surfaces of the first and second plated areas are exposed exterior to the package. Additional embodiments include a method of making the package.
1. A method of making a packaged semiconductor device comprising:
a. plating a first pattern on a top surface of a monolithic substrate thereby forming a plurality of routing traces each having a first contact point and at least one additional contact point;
b. plating a second pattern on a bottom surface of a monolithic substrate;
c. mounting a semiconductor die on the top surface of the monolithic substrate;
d. electrically coupling wirebonds from the semiconductor die to first contact points of the plurality of plated routing traces;
e. encapsulating the semiconductor die;
f. etching away portions of the monolithic substrate not plated by the second pattern thereby forming standoffs disposed at the at least one additional contact point; and
g. singulating the semiconductor device.
2. The method of claim 1 wherein the first pattern comprises any among a list of gold, silver, nickel, palladium and any alloy combination thereof.
3. The method of claim 1 wherein the plating a first pattern comprises arranging the first pattern such that the plurality of plated routing traces are disposed under the semiconductor die.
4. The method of claim 1 further comprising metallizing any exposed portion of the standoffs.
5. The method of claim 1 further comprising forming an underfill layer for encapsulating at least a portion of the standoffs.
6. The method of claim 1 wherein the first pattern and the second pattern are mirror images of one another, and each standoff runs an entire length of the first pattern and second pattern.
7. The method of claim 5 wherein a thickness of the underfill layer is less than a thickness of the standoffs.
8. The method of claim 1 further comprising mounting solder balls on the standoffs.
9. The method of claim 1 wherein a standoff runs a length of a routing trace from the at least one additional contact point to the first contact point.
10. The method of claim 1 wherein additional contact points of the plurality of plated routing traces includes support structures.
11. The method of claim 10 wherein the support structures extend outward from the additional contact points.
12. The method of claim 10 wherein the support structures substantially circumscribe the additional contact points.
13. The method of claim 1 wherein the at least one additional contact point includes a plurality of plated layers.
14. The method of claim 1 wherein the first contact point includes a plurality of plated layers.
15. A method of making a packaged semiconductor device comprising:
a. plating a first pattern on a top surface of a monolithic substrate thereby forming a plurality of routing traces each having a first contact point and at least one additional contact point;
b. plating a second pattern on a bottom surface of a monolithic substrate;
c. mounting a semiconductor die on the top surface of the monolithic substrate;
d. electrically coupling wirebonds from the semiconductor die to first contact points of the plurality of plated routing traces;
e. encapsulating the semiconductor die;
f. etching away portions of the monolithic substrate not plated by the second pattern thereby forming standoffs disposed at the at least one additional contact point, wherein a standoff runs a length of a routing trace from the at least one additional contact point to the first contact point; and
g. singulating the semiconductor device.
16. A method of making a packaged semiconductor device comprising:
a. plating a first pattern on a top surface of a monolithic substrate thereby forming a plurality of routing traces each having a first contact point and at least one additional contact point;
b. plating a second pattern on a bottom surface of a monolithic substrate;
c. mounting a semiconductor die on the top surface of the monolithic substrate;
d. electrically coupling wirebonds from the semiconductor die to first contact points of the plurality of plated routing traces;
e. encapsulating the semiconductor die;
f. etching away portions of the monolithic substrate not plated by the second pattern thereby forming standoffs disposed at the at least one additional contact point, wherein additional contact points of the plurality of plated routing traces include support structures; and
g. singulating the semiconductor device.
17. The method of claim 16 wherein the support structures extend outward from the additional contact points.
18. The method of claim 16 wherein the support structures substantially circumscribe the additional contact points.