Seal ring structure with a v-shaped dielectric layer conformally overlapping a conductive layer
View Patent ↗A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.
1. A seal ring structure, comprising:
at least a metal stack, a first dielectric layer, a conductive layer and a second dielectric layer sequentially disposed in a seal ring region of a substrate, wherein at least a side between the first dielectric layer and the conductive layer is not perpendicular to a top surface of the first dielectric layer, the second dielectric layer comprises a v-shaped surface, the top surface of the second dielectric layer is exposed, and the second dielectric layer directly contacting and totally overlapping all of the conductive layer.
2. The seal ring structure according to claim 1 , wherein the side between the first dielectric layer and the conductive layer is tilted.
3. The seal ring structure according to claim 2 , wherein the side between the first dielectric layer and the conductive layer comprises various tilt angles.
4. The seal ring structure according to claim 1 , wherein the side between the first dielectric layer and the conductive layer comprises a concave-curved side.
5. The seal ring structure according to claim 4 , wherein the side between the first dielectric layer and the conductive layer has at least two different values of curvature.
6. The seal ring structure according to claim 5 , wherein the side between the first dielectric layer and the conductive layer comprises at least an upper side and at least a lower side, and a curvature of the upper side is substantially larger than a curvature of the lower side.
7. The seal ring structure according to claim 1 , wherein a thickness of the first dielectric layer is substantially smaller than 10000 Angstroms (Å).
8. A seal ring structure, comprising:
at least a metal stack, a first dielectric layer, a conductive layer and a second dielectric layer sequentially disposed in a seal ring region of a substrate, wherein at least a side between the first dielectric layer and the conductive layer is not perpendicular to a top surface of the first dielectric layer, the second dielectric layer comprises a v-shaped surface, the second dielectric layer directly contacting and totally overlapping the conductive layer, the metal stack includes a plurality of metal layers, and the conductive layer in the seal ring region serve as a stress release pad.