Nanoporous structures by reactive ion etching
View Patent ↗A method for forming porous metal structures and the resulting structure may include forming a metal structure above a substrate. A masking layer may be formed above the metal structure, and then etched using a reactive ion etching process with a mask etchant and a metal etchant. Etching the masking layer may result in the formation of a plurality of pores in the metal structure. In some embodiments, the metal structure may include a first end region, a second end region, and an intermediate region. Before etching the masking layer, a protective layer may be formed above the first end region and the second end region, so that the plurality of pores is contained within the intermediate region. In some embodiments, the intermediate metal region may be a nanostructure such as a nanowire.
1. A method of perforating a metal structure, the method comprising:
forming a masking layer above the metal structure; and
removing at least a portion of the masking layer using a reactive ion etching process with an etching gas containing a fluorocarbon mask etchant, and a metal etchant, wherein removing the masking layer forms a plurality of pores in the metal structure, wherein the masking layer comprises a material selected from the group consisting of titanium nitride, silicon nitride, tantalum nitride, and silicon oxide.
2. The method of claim 1 , wherein the metal structure comprises a metal selected from the group consisting of palladium, gold, titanium, and platinum.
3. The method of claim 1 , wherein the mask etchant comprises chlorine and fluoroform.
4. The method of claim 1 , wherein the metal etchant comprises argon or methane.
5. The method of claim 1 , wherein the plurality of pores have an average diameter of less than approximately 10 nm.
6. A method of forming a porous metal structure, the method comprising:
forming a metal structure above a substrate, wherein the metal structure comprises a first end region, a second end region, and an intermediate region between the first end region and the second end region;
forming a masking layer above the metal structure, wherein the masking layer covers the metal structure;
forming a protective layer above the first end region and the second end region; and
etching the masking layer away from above the intermediate region using a reactive ion etching process with a mask etchant and a metal etchant, wherein etching the masking layer forms a plurality of pores in the intermediate region.
7. The method of claim 6 , wherein the metal structure comprises a metal selected from the group consisting of palladium, gold, titanium, and platinum.
8. The method of claim 6 , wherein the intermediate region comprises a nanowire.
9. The method of claim 6 , wherein the masking layer comprises a material selected from the group consisting of titanium nitride, silicon nitride, tantalum nitride, and silicon oxide.
10. The method of claim 6 , wherein the protective layer comprises a material selected from the group consisting of photoresists, oxides, and nitrides.
11. The method of claim 6 , wherein the mask etchant comprises chlorine and fluoroform.
12. The method of claim 6 , wherein the metal etchant comprises argon or methane.
13. The method of claim 6 , wherein the plurality of pores have an average diameter of less than 10 nm.