Switching circuit and controller circuit
New designs of high power switching circuits and controller circuits are provided. Principal silicon bipolar switch is connected in parallel to snubber switch that is formed of a wide bandgap material. The snubber switch is activated during at least one of turn-on and turn-off of the principal silicon switch so as to minimize (or reduce) the switching loss and to bypass safe operation area limitations.
1. A switching circuit, comprising:
a first switching device, the first switching device being a silicon-based bipolar switching device;
a second switching device including a wide bandgap semiconductor, the first switching device, the second switching device including a cascode circuit and a low-voltage silicon metal-oxide-semiconductor field-effect transistor (MOSFET), the low-voltage silicon MOSFET having a source terminal and a drain terminal both clamped by a Zener diode; and
a controller circuit configured to trigger the second switching device before triggering at least one of turn-on or turn-off of the first switching device such that the second switching device is activated during at least one of turn-on or turn-off of the first switching device.
2. The switching circuit of claim 1 , being configured to operate within a high power high voltage switching application.
3. The switching circuit of claim 1 , wherein the first switching device includes a silicon bipolar junction transistor and the second switching device includes at least one of a silicon carbide (SiC) bipolar junction transistor, a SiC junction field-effect transistor, a SiC metal semiconductor field-effect transistor, a SiC metal-oxide-semiconductor field-effect transistor, a SiC insulated gate bipolar transistor and a GaN-based heterojunction field-effect transistor.
4. The switching circuit of claim 1 , wherein the first switching device is included in a first chip and the second switching device is included in a second chip, the first chip and the second chip being included in a hybrid assembly in a package.
5. The switching circuit of claim 1 , further comprising an antiparallel rectifier diode.
6. A switching system, comprising at least two switching circuits as defined in claim 1 .
7. A switching circuit, comprising:
a first silicon-based bipolar switching device;
a second switching device including a wide bandgap semiconductor, the first switching device and second switching device being connected in parallel; and
a controller circuit operatively coupled to the switching circuit, the controller circuit being configured to trigger the second switching device before triggering at least one of turn-on and turn-off of the first switching device such that the second switching device is activated during the at least one of the turn-on and the turn-off of the first switching device.
8. The switching circuit of claim 7 , wherein the controller circuit is configured to activate the second switching device during turn-off of the first switching device at least during a time period corresponding to at least one lifetime of a minority carrier in the first switching device.
9. The switching circuit of claim 7 , wherein the controller circuit is configured to, upon turn-on of the first switching device, activate the second switching device for a time period lasting at least one quarter of a turn-on period of the first switching device.
10. The switching circuit of claim 7 , wherein the controller circuit is configured to increase a duration of a turn-on period of the second switching device with an increase of a junction temperature of the first switching device.
11. The switching circuit of claim 7 , wherein the switching circuit and the controller circuit are included in a switch-mode electrical power conversion device.
12. The switching circuit of claim 7 , wherein the switching circuit is configured to operate within a high power high voltage switching application.
13. The switching circuit of claim 7 , wherein the first switching device includes a silicon bipolar junction transistor and the second switching device includes at least one of a silicon carbide (SiC) bipolar junction transistor, a SiC junction field-effect transistor, a SiC metal semiconductor field-effect transistor, a SiC metal-oxide-semiconductor field-effect transistor, a SiC insulated gate bipolar transistor and a GaN-based heterojunction field-effect transistor.
14. The switching circuit of claim 7 , wherein the second switching device includes a cascode circuit including a wide bandgap field-effect transistor, and a low-voltage silicon MOSFET.
15. The switching circuit of claim 14 , wherein the low-voltage silicon MOSFET has a source terminal and a drain terminal both clamped by a Zener diode.
16. The switching circuit of claim 7 , wherein the first switching device is included in a first chip and the second switching device is included in a second chip, the first chip and the second chip being included in a hybrid assembly in a package.
17. The switching circuit of claim 7 , wherein the switching circuit further includes an antiparallel rectifier diode.
18. The switching circuit of claim 7 , wherein the controller circuit further includes a current sensing probe for detecting short circuits.
19. The switching circuit of claim 7 , wherein the second switching device is in an off-state between the turn-on of the first switching device and the turn-off of the first switching device.