IP Library Granted Patent US 9,297,586
Granted Patent B2
US 9,297,586 · App. 13/924,837 · Granted Mar 29, 2016

Method of generating cracks in polycrystalline silicon rod and crack generating apparatus

Inventor: Syuuhei Hayashida (Yokkaichi, JP)
Assignee: MITSUBISHI MATERIALS CORPORATION
F27D9/00B02C19/18B02C19/186C30B15/00C30B15/02C30B29/06
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Quick Facts
Patent No.
US 9,297,586
App. No.
13/924,837
Granted
Mar 29, 2016
Kind
B2
Abstract

A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.

Claims (11)

1. An apparatus of generating cracks in a polycrystalline silicon rod by heating the polycrystalline silicon rod and subsequently quenching the polycrystalline silicon rod, comprising:

a heating unit to heat a polycrystalline silicon rod; and

a local portion cooling unit by which a refrigerant fluid is applied onto at least one spot-like area of a surface of the polycrystalline silicon rod,

wherein each of the spot-like area has a diameter of not smaller than 0.20 D and not larger than 0.32 D, where D denotes a diameter of the polycrystalline silicon rod.

2. The apparatus of generating cracks in a polycrystalline silicon rod according to claim 1 , wherein

the local portion cooling unit includes nozzles which are arranged on both sides of the polycrystalline silicon rod, wherein

a plurality of nozzles are arranged with spaces between adjacent nozzles on each side of the polycrystalline silicon rod along a lengthwise direction of the rod such that a substantially middle position of each space between adjacent nozzles on a first side faces a nozzle on a second side.

3. The apparatus of generating cracks in a polycrystalline silicon rod according to claim 1 , further comprising

an entire portion cooling unit that makes a refrigerant substance contact an entire surface of the polycrystalline silicon rod.

4. The apparatus of generating cracks in a polycrystalline silicon rod according to claim 3 , wherein

the refrigerant substance is a refrigerant fluid.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2023
From: MITSUBISHI MATERIALS CORPORATION
To: HIGH-PURITY SILICON CORPORATION
Reel/Frame 063858/0867 →
Priority Claims (1)
JP 2009-175441 · Jul 28, 2009 · national
Continuity (2)
Division 12805308 · Jul 23, 2010
Related Publication 20140000318A1 · Jan 2, 2014