Method for fabricating multiple types of MEMS devices
View Patent ↗A method entails providing a substrate with a structural layer having a thickness. A partial etch process is performed at locations on the structural layer so that a portion of the structural layer remains at the locations. An oxidation process is performed at the locations which consumes the remaining portion of the structural layer and forms an oxide having a thickness that is similar to the thickness of the structural layer. The oxide electrically isolates microstructures in the structural layer, thus producing a structure. A device substrate is coupled to the structure such that a cavity is formed between them. An active region is formed in the device substrate. A short etch process can be performed to expose the microstructures from an overlying oxide layer.
1. A method comprising:
providing a substrate having a structural layer formed thereon, said structural layer having a first thickness;
removing a first portion of said structural layer at a predetermined location on said structural layer, said first portion of said structural layer having a second thickness that is less than said first thickness so that a second portion of said structural layer remains at said predetermined location; and
performing an oxidation process at said predetermined location to form an oxide, said oxidation process consuming said second portion of said structural layer.
2. A method as claimed in claim 1 wherein said structural layer is formed from polysilicon, and said oxidation process is a local oxidation of silicon process implemented to thermally grow said oxide using said polysilicon of said structural layer.
3. A method as claimed in claim 1 wherein said removing produces conductive microstructures in said structural layer, and said second portion is entirely consumed to provide electrical isolation between adjacent ones of said conductive microstructures.
4. A method as claimed in claim 1 wherein said removing produces microstructures in said structural layer, said microstructures remaining following said performing operation.
5. A method as claimed in claim 1 wherein:
said second thickness of said first portion is approximately one half of said first thickness of said structural layer; and
a third thickness of said oxide following said performing is greater than said first thickness of said structural layer.
6. A method as claimed in claim 1 wherein said structural layer is formed over an oxide layer.
7. A method as claimed in claim 1 further comprising:
following said performing, forming an oxide layer over said structural layer and said oxide; and
planarizing said oxide layer.
8. A method as claimed in claim 1 wherein said substrate is a first substrate, and said method further comprises:
coupling a second substrate to said first substrate with said oxide interposed between said first and second substrates; and
forming an active region of a microelectromechanical systems (MEMS) device in said second substrate.
9. A method as claimed in claim 8 wherein said coupling comprises fusion bonding said second substrate to said first substrate.
10. A method as claimed in claim 8 wherein said second substrate is coupled to said first substrate in spaced apart relationship to produce a cavity between said first and second substrates.
11. A method as claimed in claim 8 further comprising performing said forming following said coupling.
12. A method as claimed in claim 8 further comprising forming an anchor structure extending through said second substrate and through said oxide formed on said first substrate.
13. A method as claimed in claim 8 wherein:
said removing produces a conductive microstructure of a microelectromechanical systems (MEMS) device in said structural layer;
following said performing, forming an oxide layer over said conductive microstructure and said oxide; and
following said coupling, exposing said conductive microstructure from said oxide layer.
14. A method of fabricating a microelectromechanical systems (MEMS) device comprising:
providing a first substrate having a structural layer formed thereon, said structural layer having a first thickness;
removing first portions of said structural layer at predetermined locations on said structural layer to produce conductive microstructures in said structural layer, each of said first portions of said structural layer having a second thickness that is less than said first thickness so that second portions of said structural layer remain at said predetermined locations;
performing an oxidation process at said predetermined locations to form an oxide, said oxidation process entirely consuming said second portions of said structural layer to provide electrical isolation between adjacent ones of said conductive microstructures;
coupling a second substrate to said first substrate with said oxide interposed between said first and second substrates; and
forming an active region of said microelectromechanical systems (MEMS) device in said second substrate following said coupling.
15. A method as claimed in claim 14 wherein said structural layer is formed from polysilicon, and said oxidation process is a local oxidation of silicon process implemented to thermally grow said oxide using said polysilicon of said structural layer.
16. A method as claimed in claim 14 further comprising:
following said performing, forming an oxide layer over said structural layer and said oxide;
planarizing said oxide layer; and
following said coupling, exposing said conductive microstructures from said oxide layer.
17. A method as claimed in claim 14 wherein said second substrate is coupled to said first substrate in spaced apart relationship to produce a cavity between said first and second substrates, said cavity underlying said active region of said MEMS device, and said conductive microstructures underlying said cavity.