Semiconductor component having a lateral semiconductor device and a vertical semiconductor device
A semiconductor component comprising a lateral semiconductor device, a vertical semiconductor device, and a leadframe is provided. The lateral semiconductor device has a first side and a second side, and a first electrode, a second electrode, and a control electrode positioned on the first side. The vertical semiconductor device has a first side and a second side, a second electrode and a control electrode of it positioned on the second side and a first electrode of it positioned on the first side. The leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device, and the control electrodes, wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and the first electrodes of both devices are electrically connected.
1. A semiconductor component comprising:
a lateral semiconductor device having a first side and a second side, the lateral semiconductor device having an active region, positioned on the first side, a first electrode, a second electrode, and a control electrode disposed in the active region on the first side;
a vertical semiconductor device having a first side and a second side, the vertical semiconductor device comprising a first electrode disposed on the first side and a second electrode and a control electrode disposed on the second side;
a conductive layer disposed in between the second side of the lateral semiconductor device and the first side of the vertical semiconductor device; and
a leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device through flip-chip bonding, the second electrode of the vertical semiconductor device, and the control electrodes,
wherein the first electrode of the vertical semiconductor device is mounted on the conductive layer over the second side of the lateral semiconductor device, and wherein the first electrode of the lateral semiconductor device is electrically connected to the first electrode of the vertical semiconductor device through a first conductive element connecting the conductive layer and the leadframe.
2. The semiconductor component according to claim 1 , wherein the first side of the lateral semiconductor device faces to the leadframe.
3. The semiconductor component according to claim 1 , wherein the control electrode of the lateral semiconductor device is electrically connected to the first electrode of the vertical semiconductor device.
4. The semiconductor component according to claim 3 , further comprising a passivation layer positioned on the first side of the lateral semiconductor device.
5. The semiconductor component according to claim 1 , wherein the leadframe comprises a plurality of portions.
6. The semiconductor component according to claim 5 , wherein at least two of the plurality of portions are substantially coplanar.
7. The semiconductor component according to claim 5 , wherein at least two of the plurality of portions are substantially non-coplanar.
8. The semiconductor component according to claim 1 , further comprising a first connector electrically connecting the first electrode of the lateral semiconductor device and the first electrode of the vertical semiconductor device.
9. The semiconductor component according to claim 8 , wherein the first electrode of the vertical semiconductor device contacts the conductive layer, and the first connector electrically connects the first electrode of the lateral semiconductor device and the conductive layer.
10. The semiconductor component according to claim 8 , wherein the first connector comprises a clip, ribbon, or bonding-wire.
11. The semiconductor component according to claim 1 , further comprising a second connector contacts both the second electrode of the vertical semiconductor and the leadframe.
12. The semiconductor component according to claim 11 , wherein the second connector comprises a clip, ribbon, or bonding-wire.
13. The semiconductor component according to claim 1 , further comprising a third connector contacts both the control electrode of the vertical semiconductor device and the leadframe.
14. The semiconductor component according to claim 13 , wherein the third connector comprises a clip, ribbon, or bonding-wire.
15. The semiconductor component according to claim 1 , wherein the lateral semiconductor device comprises a metal-insulator-semiconductor field-effect transistor (MISFET), a metal semiconductor field effect transistor (MESFET), or a High-electron-mobility transistor (HEMT).
16. The semiconductor component according to claim 1 , wherein the lateral semiconductor device comprises a nitride-based power transistor.
17. The semiconductor component according to claim 1 , wherein the first electrode of the lateral semiconductor device is a source electrode, the second electrode of the lateral semiconductor device is a drain electrode, the first electrode of the vertical semiconductor device is a drain electrode, the second electrode of the vertical semiconductor device is a source electrode, and the control electrodes of the lateral and the vertical semiconductor devices are gate electrodes.
18. The semiconductor component according to claim 1 , wherein the lateral semiconductor device has a thickness larger than that of the vertical semiconductor device.
19. The semiconductor component according to claim 1 , wherein the control electrode of the lateral semiconductor device is electrically connected to the second electrode of the vertical semiconductor device.
20. The semiconductor component according to claim 1 , wherein the first conductive element is a metal clip.