Film deposition apparatus having a peripheral spiral gas curtain
A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.
1. A film deposition apparatus having a peripheral gas curtain that prolongs reaction gas residence time, comprising:
a process chamber defining a processing space and having two sides in which are defined respective side openings;
a first gas showerhead unit arranged proximate to a top portion of the process chamber, having a reaction gas supply chamber that receives reaction gas provided through a top portion of the first gas showerhead unit, and having a gas distribution plate, in which are defined a plurality of gas through holes provided in a bottom portion of the first gas showerhead unit in line with center portions of the respective side openings of the process chamber through which the reaction gas is injected from the reaction gas supply chamber into the processing space of the process chamber as a vertically downward flow to form a reaction gas region;
a substrate platform disposed within the processing space below the respective side openings of the process chamber, configured to be movable up and down, and arranged to receive a substrate on which a film is to be deposited and to expose the substrate to the reaction gas within the reaction gas region;
a vacuum pump connected to said respective side openings of the process chamber to cause a vacuum negative pressure to build inside the processing space of the process chamber;
a second gas showerhead unit arranged proximate to the top portion of the process chamber, circumferentially surrounding a periphery of the first gas showerhead unit, having a buffer gas chamber that receives buffer gas provided in a top portion of the buffer gas chamber, and having a gas curtain distribution plate, in which is defined a plurality of buffer gas through holes, provided in a bottom portion of the buffer gas chamber in line with center portions of the respective side openings of the process chamber through which the buffer gas is injected into the processing space of the process chamber as said peripheral gas curtain which surrounds the periphery of the reaction gas region in a manner effective to maintain the vertically downward flow of the reaction gas and reduce removal of the reaction gas due to the vacuum negative pressure caused by the vacuum pump so as to prolong reaction gas residence time; and
a circulation cooling unit, disposed at a position between the first gas showerhead unit and the second gas showerhead unit and surrounding the periphery of the first gas showerhead unit;
wherein the plurality of buffer gas through holes defined in the gas curtain distribution plate is a plurality of oblique through holes, each oblique through hole of the plurality of oblique through holes being inwardly inclined toward the processing space of the process chamber, and the peripheral gas curtain being a spiral gas curtain, and
wherein each oblique through hole of the plurality of oblique through holes has a cross section that is a circle or a slit.
2. The film deposition apparatus of claim 1 , wherein the buffer gas is the same gas as the reaction gas.
3. The film deposition apparatus of claim 1 , wherein the buffer gas is an inert gas.
4. The film deposition apparatus of claim 1 , wherein the gas distribution plate is a circular plate, and the reaction gas supply chamber has a cross section that is circular.
5. The film deposition apparatus of claim 1 , wherein the gas distribution plate is integrally formed with the gas curtain distribution plate.