Method for Removal of Carbon from an Organosilicate Material
Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.
1 . A method for forming an organosilicate film on a substrate comprising:
providing a composite organosilicate film wherein the composite organosilicate film is deposited from a composition comprising at least one silicon-containing precursor and at least one porogen-containing precursor and wherein the composite organosilicate film comprises a first refractive index and a first extinction coefficient; and
treating the composite organosilicate film to a chemical comprising an oxidizer to provide an organosilicate film wherein the organosilicate film has a second refractive index and a second extinction coefficient wherein the second refractive index and the second extinction coefficient is less than the first refractive index and the first extinction coefficient after the treating step.
2 . The method of claim 2 further comprising exposing the composite organosilicate film to an energy source comprising ultraviolet light.
3 . The method of claim 2 wherein the treating step is conducted during at least a portion of the exposing step.
4 . The method of claim 2 wherein the exposing step is conducted prior to the treating step.
5 . The method of claim 2 wherein the treating step is conducted prior to the exposing step.
6 . The method of claim 2 further comprising exposing the organosilicate film to the energy source.
7 . The method of claim 2 wherein the energy source further comprises at least one chosen from a thermal source, α-particles, β-particles, γ-rays, x-rays, high energy electron, electron beam, visible light, infrared light, microwave, radio-frequency wavelengths, and combinations thereof.
8 . The method of claim 1 wherein the chemical comprises an oxidizer.
9 . The method of claim 8 wherein the oxidizer comprises at least one chosen from oxygen, ozone, ozonated water, SPM, oxygen atoms, radicals of O 2 or O 3 , charged species of O 2 or O 3 , and combinations thereof.
10 . The method of claim 9 wherein the oxidizer comprises ozone.
11 . The method of claim 9 wherein the oxidizer comprises ozonated water.
12 . The method of claim 9 wherein the oxidizer comprises SPM.
13 . The method of claim 1 wherein the substrate is at least one selected from silicon glass, silicon nitride, fused silica, glass, quartz, borosilicate glass, and combinations thereof.
14 . The method of claim 1 wherein the at least one silicon-containing precursor is chosen from diethoxymethylsilane, tetraethoxysilane, dimethyldiethoxysilane, dimethyldimethoxysilane, dimethylethoxysilane, triethoxysilane, trimethylphenoxysilane, phenoxysilane, hexamethyldisiloxane, 1,1,2,2-tetramethyldisiloxane, octamethyltrisiloxane, methyltriethoxysilane, methyltriacetoxysilane, tetraacetoxysilane, dimethylsilacyclobutane, octamethylcyclotetrasiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane, methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, methylene bridged alkoxy silanes, and combinations thereof.
15 . The method of claim 1 wherein the at least one porogen precursor is chosen from alpha-terpinene, limonene, cyclohexane, cyclooctane, bicyclohexadiene, gamma-terpinene, camphene, dimethylhexadiene, ethylbenzene, norbonadiene, cyclopentene oxide, 1,2,4-trimethylcyclohexane, 1,5-dimethyl-1,5-cyclooctadiene, camphene, adamantane, 1,3-butadiene, substituted dienes, decahydronaphthelene, toluene, and combinations thereof.
16 . The method of claim 1 wherein the at least one porogen precursor comprises a gaseous hydrocarbon having from 1 to 13 carbon atoms.
17 . A method for forming a porous organosilicate film on a substrate comprising:
forming via vapor deposition a composite organosilicate film from a composition comprising at least one silicon-containing precursor and at least one porogen-containing precursor wherein the composite organosilicate film comprises carbon-containing species;
treating the composite organosilicate film to a chemical comprising an oxidizer to remove at least a portion of the carbon-containing species contained therein; and
exposing the composite organosilicate film to an energy source comprising ultraviolet light and optionally thermal energy to remove at least a portion of the carbon-containing species contained therein and provide the porous organosilicate film wherein the film after the treating step has a refractive index and extinction coefficient that are less than the refractive index and extinction coefficient before the treating step.
18 . The method of claim 18 wherein the oxidizer comprises at least one chosen from oxygen, ozone, ozonated water, SPM, oxygen atoms, radicals of O 2 or O 3 , charged species of O 2 or O 3 , and combinations thereof.
19 . The method of claim 17 wherein the treating step is conducted during at least a portion of the exposing step.
20 . The method of claim 17 wherein the exposing step is conducted prior to the treating step.
21 . The method of claim 17 wherein the treating step is conducted prior to the exposing step.
22 . A method for forming a porous organosilicate film on a substrate comprising:
providing a composite organosilicate film wherein the composite organosilicate film comprises carbon-containing species, a first refractive index and a first extinction coefficient of extinction;
treating the composite organosilicate film to a chemical comprising an oxidizer to remove at least a portion of the carbon-containing species therein; and
exposing the composite organosilicate film to an energy source comprising ultraviolet light to remove at least a portion of the carbon-containing species therein and provide the porous organosilicate film comprising a second refractive index and a second extinction coefficient wherein the second refractive index and the second extinction coefficient are substantially the same as or less than the first refractive index and first extinction coefficient.
23 . A porous organosilicate film comprising: a dielectric constant ranging from 1.2 to 2.5 and an extinction coefficient of the film measured at 240 nm by ellipsometer ranging from 0 to 0.03
24 . The porous organosilicate film of claim 23 comprising pores wherein the average size of the pores is about 100 nanometers or less.
25 . The porous organosilicate film of claim 23 wherein the extinction coefficient of the film measured at 240 nm ranges from 0 to 0.025.
26 . The substrate of any one of claims 1 , 17 , and 22 wherein the substrate is one selected from an integrated circuit, a flat panel display, and a flexible display.
27 . The substrate of any one of claims 1 , 17 , and 22 wherein the substrate is at least one selected from a crystalline silicon, a polysilicon, an amorphous silicon, an epitaxial silicon, silicon dioxide (“SiO 2 ”), silicon glass, silicon nitride, fused silica, glass, quartz, borosilicate glass, and combinations thereof.