Diode having vertical structure
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
1. A light emitting device comprising:
an Al layer;
an undoped GaN buffer layer on the Al layer;
an n-GaN layer on the undoped GaN buffer layer;
an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
a p-GaN layer on the active layer; and
a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
wherein the undoped GaN buffer layer is thicker than the Al layer.
2. The device according to claim 1 , wherein a ratio of a thickness of the Al layer to a thickness of the undoped GaN buffer layer is greater than 0.0075.
3. The device according to claim 1 , wherein the n-GaN layer is doped with Si with a doping concentration of 10 17 cm −3 greater.
4. The device according to claim 1 , wherein the p-GaN layer is doped with Mg with a doping concentration of 10 17 cm −3 greater.
5. The device according to claim 1 further comprising a metal layer comprising Au.
6. The device according to claim 1 , wherein the Al layer serves as a reflective layer.
7. The device according to claim 1 further comprising a transparent substrate on the Al layer.
8. The device according to claim 1 further comprising a clad layer including AlGaN between the active layer and the p-GaN layer.
9. A light emitting device comprising:
a metal layer comprising Au;
an Al layer on the metal layer;
an undoped GaN buffer layer on the Al layer;
an n-GaN layer on the undoped GaN buffer layer;
an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
a p-GaN layer on the active layer; and
a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
wherein a thickness of the undoped GaN buffer layer is thicker than a thickness of the Al layer.
10. The device according to claim 9 , wherein a ratio of the thickness of the Al layer to the thickness of the undoped GaN buffer layer is greater than 0.0075.
11. The device according to claim 9 , wherein the n-GaN layer is doped with Si with a doping concentration of 10 17 cm −3 or greater.
12. The device according to claim 9 , wherein the p-GaN layer is doped with Mg with a doping concentration of 10 17 cm −3 or greater.
13. The device according to claim 9 , wherein the Al layer serves as a reflective layer.
14. The device according to claim 9 further comprising a transparent substrate on the Al layer.
15. The device according to claim 9 further comprising a clad layer including AlGaN between the active layer and the p-GaN layer.
16. A light emitting device comprising:
a metal layer comprising Au;
an Al layer on the metal layer;
an undoped GaN buffer layer on the Al layer;
an n-GaN layer on the undoped GaN buffer layer;
an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
a p-GaN layer on the active layer; and
a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
wherein the undoped GaN buffer layer is thicker than the Al layer,
wherein ratio of a thickness of the Al layer to a thickness of the undoped GaN buffer layer is greater than 0.0075,
wherein the n-GaN layer is doped with Si with a doping concentration of 10 17 cm −3 or greater, and
wherein the p-GaN layer is doped with Mg with a doping concentration of 10 17 cm −3 or greater.
17. The device according to claim 16 , wherein the Al layer serves as a reflective layer.
18. The device according to claim 16 further comprising a transparent substrate on the Al layer.
19. The device according to claim 18 , wherein the Al layer covers a bottom surface of the transparent substrate.
20. The device according to claim 16 further comprising a clad layer including AlGaN between the active layer and the p-GaN layer.