Imaging systems with front side illuminated near infrared imaging pixels
View Patent ↗An imaging system may include an image sensor having front side illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded p-type epitaxial layer or a graded n-type epitaxial layer on a graded p-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the graded epitaxial layer. A deep p-well may be formed within each isolation trench. The isolation trenches and photodiodes for the pixels may be formed in the graded p-type epitaxial layer or the graded n-type epitaxial layer. The graded p-type epitaxial layer may have an increasing concentration of dopants that increases toward the backside of the image sensor. The graded n-type epitaxial layer may have an increasing concentration of dopants that increases toward the front side of the image sensor.
1. An image sensor, comprising:
a graded p-type epitaxial substrate layer;
a plurality of front side illuminated image sensor pixels formed in the graded p-type epitaxial substrate layer; and
a plurality of isolation trenches in the graded p-type epitaxial substrate layer that separate adjacent front side illuminated image sensor pixels.
2. The image sensor defined in claim 1 , further comprising:
a deep p-well formed in each of the plurality of isolation trenches.
3. The image sensor defined in claim 2 , further comprising:
a passivation layer on sidewall surfaces of each of the plurality of isolation trenches.
4. The image sensor defined in claim 2 , further comprising:
a dielectric stack formed on the graded p-type epitaxial substrate layer.
5. The image sensor defined in claim 4 wherein the dielectric stack comprises metal interconnects in a dielectric material.
6. The image sensor defined in claim 5 wherein each front side illuminated image sensor pixel includes a microlens.
7. The image sensor defined in claim 6 wherein each front side illuminated image sensor pixel includes a photodiode formed in the graded p-type epitaxial substrate layer.
8. The image sensor defined in claim 7 wherein the dielectric stack is interposed between the photodiodes and the microlenses of the front side illuminated image sensor pixels.
9. An image sensor, comprising:
a graded p-type epitaxial substrate layer; a graded n-type epitaxial substrate layer on the graded p-type epitaxial substrate layer;
a plurality of front side photodiodes formed in the graded n-type epitaxial substrate layer; and
a plurality of isolation trenches in the graded n-type epitaxial substrate layer that separate adjacent photodiodes.
10. The image sensor defined in claim 9 , further comprising:
a deep p-well formed in each of the plurality of isolation trenches that extends from the graded n-type epitaxial substrate layer at least to the graded p-type epitaxial substrate layer.
11. The image sensor defined in claim 10 , further comprising:
oxide material in each of the plurality of isolation trenches.
12. The image sensor defined in claim 11 , further comprising:
a dielectric stack on the graded n-type epitaxial substrate layer.
13. The image sensor defined in claim 12 wherein the graded n-type epitaxial substrate layer is interposed between the dielectric stack and the graded p-type epitaxial substrate layer.
14. The image sensor defined in claim 13 , further comprising:
a plurality of microlenses, wherein each of the plurality of microlenses is configured to focus light onto an associated one of the plurality of photodiodes through the dielectric stack.
15. The image sensor defined in claim 14 wherein the dielectric stack in interposed between the plurality of microlenses and the plurality of photodiodes.
16. The image sensor defined in claim 15 , further comprising:
a plurality of color filter elements, wherein each of the plurality of microlenses is configured to focus light onto the associated one of the plurality of photodiodes through an associated one of the color filter elements and through the dielectric stack.
17. A system, comprising:
a central processing unit;
memory;
input-output circuitry; and
an imaging device, wherein the imaging device comprises:
a graded epitaxial substrate layer, wherein the graded epitaxial substrate layer comprises a dopant; and
an array of front side illuminated near infrared pixels in the graded epitaxial substrate layer, wherein each front side illuminated near infrared pixel is separated from an adjacent front side illuminated near infrared pixel by a deep isolation trench formed in the graded epitaxial substrate layer, wherein each of the front side illuminated near infrared pixels comprises a front side through which light is received and a back side opposite the front side, and wherein the concentration of the dopant in the graded epitaxial substrate layer increases towards the back side of each of the front side illuminated near infrared pixels.
18. The system defined in claim 17 wherein the imaging device further comprises a deep p-well in each deep isolation trench.
19. The system defined in claim 18 wherein the dopant comprises a p-type dopant and the graded epitaxial substrate layer comprises a graded p-type epitaxial layer.
20. The system defined in claim 19 further comprising:
an additional dopant, wherein the additional dopant comprises an n-type dopant; and
an additional graded epitaxial substrate layer, wherein the additional graded epitaxial substrate layer comprises a graded n-type epitaxial layer that is doped with the n-type dopant.