Granted Patent B1

US 8,871,598 · App. 13/955,665 · Granted Oct 28, 2014

Abstract

Claims (86)

1. A method of making a semiconductor device comprising:

depositing protective layers over a non-volatile memory gate structure on a memory region of a substrate, wherein the protective layers include a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer;

depositing a high-k dielectric layer over the protective layers and over a logic region of the substrate;

depositing a metal gate layer over the high-k dielectric layer in the memory and logic regions;

depositing a first polysilicon layer over the metal gate layer in the memory and logic regions;

patterning and etching the memory and logic regions to form a logic gate in the logic region to remove the protective layers in the logic region, wherein the protective layers remain in the memory region after the etching;

depositing a first layer of spacer material over the memory and logic regions;

removing the first layer of spacer material, the nitride layer and the second oxide layer from the memory region; and

etching the first oxide layer along with the first layer of spacer material to form first spacers on the non-volatile memory gate structure and the logic gate.

2. The method of claim 1 further comprising:

forming the non-volatile memory gate structure including:

forming a select gate;

forming a charge storage layer over the select gate in the memory region and over the logic region;

depositing a second polysilicon layer over the charge storage layer;

etching the second polysilicon layer to form a control gate over a portion of a top and sidewall of the select gate; and

removing the charge storage layer from areas of the memory region that do not underlie the control gate and from the logic region.

3. The method of claim 2 wherein the charge storage layer includes nanocrystals between layers of dielectric material.

4. The method of claim 2 wherein the second polysilicon layer is deposited in the memory region and the logic region.

5. The method of claim 2 wherein the second polysilicon layer remains in the logic region until after the protective layers are deposited.

6. The method of claim 1 further comprising:

after forming the first spacers, creating halo implants in the substrate for the non-volatile memory gate structure and the logic gate.

7. The method of claim 6 further comprising:

after forming the halo implants,

forming second spacers on the first spacers of the non-volatile memory gate structure and the logic gate;

forming source and drain regions for the logic gate and non-volatile memory gate structure; and

forming self-aligned silicide regions on exposed portions of the source and drain regions.

8. The method of claim 1 further comprising:

depositing the protective layers in the logic region along with the memory region; and

removing the protective layers from the logic region before depositing the high-k dielectric layer over the logic region and the memory region.

9. A method of making a semiconductor device comprising:

forming a split gate memory gate structure on a memory region of a substrate;

protecting the split gate memory gate structure by depositing protective layers over the memory region including the split gate memory gate structure and over a logic region of the substrate, wherein the protective layers include a material that creates a barrier to diffusion of metal;

retaining the protective layers over the memory region while forming a logic gate in the logic region, the logic gate includes a high-k dielectric layer and a metal layer;

depositing spacer material over the logic gate; and

forming a spacers on the split gate memory gate structure and a spacer on the logic gate, wherein the spacer on the logic gate is formed of the spacer material and the spacer on the split gate memory structure is formed with one of the protective layers.

10. The method of claim 9 wherein depositing the protective layers includes depositing the protective layers over the logic region along with the depositing the protective layers over the memory region.

11. The method of claim 9 wherein the protective layers include a first oxide layer, the material that creates a barrier to diffusion of metal, and a second oxide layer, and the first oxide layer is used to form one of the spacers on the split gate memory gate structure.

12. The method of claim 9 wherein the forming the split gate memory gate structure comprises:

forming a select gate;

forming a charge storage layer over the select gate including:

depositing a bottom dielectric layer over the select gate;

depositing nanocrystals over the bottom dielectric layer; and

depositing a top dielectric layer over the nanocrystals; and

forming a control gate over the charge storage layer.

13. The method of claim 12 wherein the forming the control gate comprises:

depositing a polysilicon layer over the memory region and the logic region and etching the polysilicon layer in the memory region while retaining the polysilicon layer in the logic region.

14. The method of claim 13 further comprising:

depositing the protective layers over the polysilicon layer in the logic region; and

removing the protective layers and the polysilicon layer in the logic region before forming the logic gate.

15. The method of claim 9 further comprising:

before forming the spacers:

depositing the spacer material over the protective layers in the memory region and the logic region while depositing the spacer material over the logic gate;

depositing photoresist over the logic region; and

in the memory region, removing the spacer material and at least the material that creates a barrier to diffusion of metal.

16. The method of claim 9 further comprising:

after forming the spacers, simultaneously creating halo implants in the substrate for the split gate memory gate structure and the logic gate.

17. The method of claim 16 further comprising:

after forming the halo implants,

forming second spacers on the spacers of the split gate memory gate structure and the logic gate;

simultaneously forming source and drain regions for the logic gate and the split gate memory gate structure; and

simultaneously forming self-aligned silicide regions on exposed portions of the source and drain regions.

18. A method of making a semiconductor device comprising:

forming a non-volatile memory gate structure in a memory region of a substrate, wherein forming the memory gate structure includes:

depositing polysilicon over the memory region and a logic region of the substrate;

masking the polysilicon in the logic region and in portions of the memory region;

etching unmasked portions of the polysilicon to form a control gate of the non-volatile memory gate structure;

depositing a first spacer material over the memory region and the logic region;

depositing a metal diffusion barrier layer over the first spacer material in the memory region and the logic region;

masking the memory region;

removing the first spacer material and the metal diffusion barrier layer from the logic region;

removing the masking from the memory region while retaining the first spacer material and the metal diffusion barrier layer in the memory region;

depositing a metal layer in the logic region and over the metal diffusion barrier layer in the memory region;

forming a metal gate from the metal layer in the logic region including removing the metal layer from the memory region; and

depositing a second spacer material in the logic region;

removing the metal layer and the protective layers in the memory region; and

etching the first spacer material to form a spacer on the non-volatile memory gate structure while etching the second spacer material for form a spacer on the metal gate.

19. The method of claim 18 further comprising:

depositing a high-k dielectric layer in the logic region and the memory region before depositing the metal layer; and

removing the high-k dielectric layer in the memory region while removing the metal layer and the protective layers in the memory region.

20. The method of claim 18 wherein the forming the non-volatile memory gate structure comprises:

before depositing the polysilicon,

forming a select gate; and

forming a charge storage layer over the select gate including:

depositing a bottom dielectric layer over the select gate;

depositing nanocrystals over the bottom dielectric layer; and

depositing a top dielectric layer over the nanocrystals.

Assignments (17)