Light-emitting device with temperature compensation

1. A light-emitting device, comprising:

a first plurality of light-emitting diodes;

a second plurality of light-emitting diodes electrically connected to the first light-emitting diode group in parallel;

a first switch device comprising a first node, a second node, and a third node, and directly connected in series to the second plurality of light-emitting diodes through the first node;

a temperature compensation element electrically connected to the second plurality of light-emitting diodes in series through a direct electrical connection to the third node of the first switch device; and

a voltage regulating device connected to the first switch device and the temperature compensation element in parallel via the second node.

2. The light-emitting device as claimed in claim 1 , wherein temperature compensation element comprises a thermistor with a negative temperature coefficient of resistance.

3. The light-emitting device as claimed in claim 1 , wherein the first plurality of light-emitting diodes is configured to emit light having a peak wavelength of 450-490 nm.

4. The light-emitting device as claimed in claim 1 , wherein the second plurality of light-emitting diodes is configured to emit light having a peak wavelength of 600-650 nm.

5. The light-emitting device as claimed in claim 1 , wherein the second plurality of light-emitting diodes has one or more hot/cold factors less than that of the first plurality of light-emitting diodes.

6. The light-emitting device as claimed in claim 1 , further comprising a board, wherein the first and second plurality of light-emitting diodes and the temperature compensation element are formed on the board.

7. The light-emitting device as claimed in claim 1 , further comprising a resistor electrically connected to the first plurality of light-emitting diodes in series, and a second switch device directly connected in series between the resistor and the first plurality of light-emitting diodes.

8. The light-emitting device as claimed in claim 7 , wherein the first switch device or the second switch device comprises power bipolar junction transistor, bipolar junction transistor (BJT), hetero-bipolar junction transistor (BJT), metal-oxide-semiconductor field-effect transistor (MOSFET), power metal-oxide-semiconductor field-effect transistor, high electron mobility transistor (HEMT), silicon controlled rectifier (SCR), insulated gate bipolar transistor (IGBT), or combinations thereof.

9. The light-emitting device as claimed in claim 7 , wherein the temperature compensation element has a first temperature coefficient of resistance and the resistor has a second temperature coefficient of resistance; and an absolute value of the first temperature coefficient of resistance is ten times greater than that of the second temperature coefficient of resistance.

10. The light-emitting device as claimed in claim 1 , wherein the second plurality of light-emitting diodes and the temperature compensation element are substantially passed through by a same current.

11. The light-emitting device as claimed in claim 1 , wherein the voltage regulating device has a voltage substantially equal to a cumulated voltage of that the temperature compensation element and the first switch device.

12. The light-emitting device as claimed in claim 1 , wherein the first plurality of light-emitting diodes and the second plurality of light-emitting diodes simultaneously emit light.

13. The light-emitting device as claimed in claim 1 , wherein the first switch device is configured to control an operating current through the second plurality of light-emitting diodes according to a voltage across the voltage regulating device and the temperature compensation element.

14. The light-emitting device as claimed in claim 1 , wherein the voltage regulating device has a voltage drop which is substantially equal to a sum of a first voltage drop between the second node and the third node and a second voltage drop of the temperature compensation element.