Nitride semiconductor structure and semiconductor light emitting device including the same
View Patent ↗A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from Al x Ga 1−x N (0<x<1) while the stress control layer is made from Al x In y Ga 1−x−y N (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
1. A semiconductor light emitting device comprising:
a substrate;
an n-type semiconductor layer disposed over the substrate;
a light emitting layer disposed over the n-type semiconductor layer and having a multiple quantum well (MQW) structure; the MQW structure having a plurality of well layers and barrier layers stacked alternately; one of the well layers being disposed between two of the barrier layers;
a stress control layer disposed over the light emitting layer and made from Al x In y Ga 1−x−y N while x and y satisfy the conditions: 0<x<1 , 0<y<1, and 0<x+y<1;
a p-type carrier blocking layer disposed over the stress control layer and made from Al x Ga 1−x N, wherein 0<x<1;
a p-type semiconductor layer disposed over the p-type carrier blocking layer;
a n-type electrode disposed on and in ohmic contact with the n-type semiconductor layer; and
a p-type electrode disposed at and in ohmic contact with the p-type semiconductor layer.
2. The semiconductor light emitting device as claimed in claim 1 , wherein the stress control layer is doped with a p-type dopant at a concentration smaller than 10 19 cm −3 .
3. The semiconductor light emitting device as claimed in claim 1 , wherein the stress control layer is doped with an n-type dopant at a concentration smaller than 10 19 cm −3 .
4. The semiconductor light emitting device as claimed in claim 1 , wherein the amount of indium in the stress control layer is equal to or smaller than the amount of indium in the well layer of the MQW structure.
5. The semiconductor light emitting device as claimed in claim 1 , wherein a thickness of the stress control layer is ranging from 2 nm to 15 nm.
6. The semiconductor light emitting device as claimed in claim 1 , wherein a thickness of the stress control layer is smaller than a thickness of the well layer of the MQW structure.
7. The semiconductor light emitting device as claimed in claim 1 , wherein the barrier layer is doped with an n-type dopant at a concentration ranging from 10 16 to 10 18 cm −3 .
8. The semiconductor light emitting device as claimed in claim 1 , wherein the p-type semiconductor layer is doped with a p-type dopant at a concentration higher than 5×10 19 cm −3 and a thickness of the p-type semiconductor layer is smaller than 30 nm.