Nitride semiconductor structure and semiconductor light emitting device including the same
View Patent ↗A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a light emitting layer disposed between a n-type semiconductor layer and a p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer. The hole supply layer is made from material In x Ga 1-x N (0<x<1) and is doped with a Group IV-A element at a concentration ranging from 10 17 to 10 20 cm −3 . By being doped with the Group IV-A element, the concentration of holes is increased and inactivation caused by Mg—H bonds is reduced. Thus Mg is activated as acceptors and the light emitting efficiency is further increased.
1. A nitride semiconductor structure comprising:
a n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer; wherein the hole supply layer is made from In x Ga 1-x N and is doped with a Group IV-A element at a concentration ranging from 10 17 to 10 20 cm −3 , wherein 0<x<1.
2. The nitride semiconductor structure as claimed in claim 1 , wherein the Group IV-A element is carbon.
3. The nitride semiconductor structure as claimed in claim 1 , wherein the hole supply layer is doped with a p-type dopant at a concentration higher than 10 18 cm −3 .
4. The nitride semiconductor structure as claimed in claim 3 , wherein the p-type dopant is magnesium.
5. The nitride semiconductor structure as claimed in claim 1 , wherein the light emitting layer has a multiple quantum well (MQW) structure; a band gap of the hole supply layer is larger than a band gap of the well layer of the MQW structure.
6. The nitride semiconductor structure as claimed in claim 1 , wherein a thickness of the hole supply layer is ranging from 1 nm to 100 nm.
7. The nitride semiconductor structure as claimed in claim 1 , wherein the hole supply layer is made from In x Ga 1-x N, wherein 0<x≦0.1.
8. The nitride semiconductor structure as claimed in claim 1 , wherein a p-type carrier blocking layer is disposed between the hole supply layer and the p-type semiconductor layer; the p-type carrier blocking layer is made from materials whose band gap is larger than a band gap of the light emitting layer.
9. The nitride semiconductor structure as claimed in claim 8 , wherein a n-type carrier blocking layer is disposed between the light emitting layer and the n-type semiconductor layer; the n-type carrier blocking layer is made from materials whose band gap is larger than a band gap of the light emitting layer.
10. The nitride semiconductor structure as claimed in claim 1 , wherein a n-type carrier blocking layer is disposed between the light emitting layer and the n-type semiconductor layer; the n-type carrier blocking layer is made from materials whose band gap is larger than a band gap of the light emitting layer.
11. A semiconductor light emitting device comprising:
a substrate;
a n-type semiconductor layer disposed over the substrate;
a light emitting layer disposed over the n-type semiconductor layer;
a hole supply layer disposed over the light emitting layer, made from In x Ga 1-x N while 0<x<1, and doped with a Group IV-A element at a concentration ranging from 10 17 to 10 20 cm −3 ;
a p-type semiconductor layer disposed over the hole supply layer;
a n-type electrode disposed on and in ohmic contact with the n-type semiconductor layer; and
a p-type electrode disposed on and in ohmic contact with the p-type semiconductor layer.