Process for producing silicon and oxide films from organoaminosilane precursors

1. A method for forming a silicon oxide film on a substrate via a vapor deposition process, the method comprising:

introducing an organoaminosilane represented by the formulas:

wherein R is selected from a C 1 -C 10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C 5 -C 10 aromatic group with or without substituents, a C 3 -C 10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R 1 is selected from a C 3 -C 10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C 5 -C 10 aromatic group with or without substituents, a C 3 -C 10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R 1 in formula A also being combinable into a cyclic group comprising from 2 to 6 carbon atoms and R 2 representing a single bond, (CH 2 ), chain, a ring, C 3 -C 10 branched alkyl, SiR 2 , or SiH 2 into a deposition chamber;

introducing at least one oxidizing agent into the deposition chamber wherein the at least one oxidizing agent reacts with the organoaminosilane to provide the silicon oxide film on the substrate

wherein the vapor deposition process is at least one selected from the group consisting of at least one selected from chemical vapor deposition, low pressure vapor deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition, and

wherein the vapor deposition process is conducted at one or more temperatures ranging from 25° C. to 375° C.

2. The method of claim 1 wherein the vapor deposition process comprises a plasma.

3. The method of claim 2 wherein the plasma is directly generated in the deposition chamber.

4. The method of claim 2 wherein the plasma is generated outside of the deposition chamber and supplied into the deposition chamber.

5. A composition for depositing a silicon-containing film by a vapor deposition process, the composition comprising:

an organoaminosilane precursor represented by the following formula A:

wherein R is selected from a C 1 -C 10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C 5 -C 10 aromatic group with or without substituents, a C 3 -C 10 heterocyclic group with or without substituents and R 1 is selected from a C 3 -C 10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C 5 -C 10 aromatic group with or without substituents, a C 3 -C 10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R 1 in formula A also being combinable into a cyclic group;

a gas selected from the group consisting of an inert gas and nitrogen.

6. The composition of claim 5 wherein R and R 1 in Formula A are each independently selected from the group consisting of isopropyl, t-butyl, sec-butyl, t-pentyl, and sec-pentyl groups.

7. The composition of claim 6 wherein R and R 1 in Formula A are each isopropyl.

8. The composition of claim 6 wherein R and R 1 in Formula A are each sec-butyl.

9. The composition of claim 5 wherein R and R 1 in Formula A are combined into a cyclic group.

10. A composition for depositing a silicon-containing film in a vapor deposition process, the composition comprising:

an organoaminosilane precursor represented by the following formula; and

a gas selected from the group consisting of an inert gas and nitrogen.

11. The composition of claim 10 wherein the gas comprises the inert gas.

12. The composition of claim 11 wherein the inert gas comprises helium.

13. The composition of claim 10 wherein the composition is contained in a pressurizable vessel fitted with the proper valves and fittings to allow delivery of to the process reactor.

14. A precursor formulation comprising:

an organoaminosilane represented by the formulae:

wherein R is selected from a C 1 -C 10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C 5 -C 10 aromatic group with or without substituents, a C 3 -C 10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R 1 is selected from a C 3 -C 10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C 5 -C 10 aromatic group with or without substituents, a C 3 -C 10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R 1 in formula A also being combinable into a cyclic group comprising from 2 to 6 carbon atoms and R 2 representing a single bond, (CH 2 ), chain, a ring, C 3 -C 10 branched alkyl, SiR 2 , or SiH 2 into a deposition chamber; and a solvent.