Extended protection for embedded erase of non-volatile memory cells
View Patent ↗Methods and systems are disclosed for extended erase protection for non-volatile memory (NVM) cells during embedded erase operations for NVM systems. The embodiments described herein utilize an additional threshold voltage (Vt) check after soft programming operation within an embedded erase operation completes to provide extended erase protection of NVM cells. In particular, the threshold voltages for NVM cells are compared against a threshold voltage (Vt) check voltage (V CHK ) level and an additional embedded erase cycle is performed if any NVM cells are found to exceed the threshold voltage (Vt) check voltage (V CHK ) level. The threshold voltage (Vt) check voltage (V CHK ) level can be, for example, a voltage level that is slightly higher than an erase verify voltage (V EV ) level and lower than read voltage level (V R ).
1. A method for erasing non-volatile memory (NVM) cells within an NVM system, comprising:
performing an embedded erase operation for non-volatile memory (NVM) cells, comprising:
erasing the NVM cells until the NVM cells have threshold voltages below an erase verify voltage level; and
soft programming the NVM cells until the NVM cells have threshold voltages above a soft program verify voltage level;
after the embedded erase operation is preformed, comparing the threshold voltages for the NVM cells to a check voltage level, the check voltage level being higher than the erase verify voltage level; and
repeating the performing step based upon results of the comparing step.
2. The method of claim 1 , wherein the repeating step comprises repeating the performing step if the results of the comparing step indicates that one or more of the NVM cells has a threshold voltage that exceeds the check voltage level.
3. The method of claim 2 , further comprising performing the comparing step and the repeating step after each performing of the embedded erase operation, counting a number of times the performing step is repeated, and indicating an erase failure if a maximum number of times has been reached.
4. The method of claim 3 , further comprising repeating the performing step only once before indicated an erase failure.
5. The method of claim 3 , wherein before the indicating step, the method includes determining a number of NVM cells having threshold voltages that exceed the check voltage level, and indicating an erase failure if the number of NVM cells exceeds a threshold value.
6. The method of claim 1 , wherein before the erasing step, the performing step further comprises pre-programming the NVM cells until the NVM cells have threshold voltages above a program verify voltage level.
7. The method of claim 1 , wherein the check voltage level is larger than the erase verify voltage level by 200 millivolts or less.
8. The method of claim 1 , wherein the check voltage level is lower than a read voltage level for the NVM system.
9. The method of claim 1 , wherein the check voltage level is adjustable.
10. The method of claim 1 , wherein before the comparing step, the method further comprises determining whether an additional voltage check is enabled for the NVM system and skipping the comparing and repeating steps if the determining step indicates that the additional voltage check is not enabled.
11. A non-volatile memory (NVM) system, comprising:
an array of non-volatile memory (NVM) cells; and
controller circuitry configured to perform an embedded erase operation for the NVM cells, to compare threshold voltages for the NVM cells to a check voltage level after the embedded erase operation, and to repeat the embedded erase operation depending upon results of the comparison;
wherein the embedded erase operation comprises an erase operation configured to cause the NVM cells to have threshold voltages below an erase verify voltage level and a soft programming operation configured to cause the NVM cells to have threshold voltages above a soft program verify voltage level; and
wherein the check voltage level is higher than the erase verify voltage level.
12. The NVM system of claim 11 , wherein the controller circuitry is configured to repeat the embedded erase operation if the results of the comparison indicate that one or more of the NVM cells has a threshold voltage that exceeds the check voltage level.
13. The NVM system of claim 12 , wherein the controller circuitry is further configured to compare threshold voltages and to repeat the embedded erase operation based upon the comparison after each embedded erase operation, to count a number of times the embedded erase operation is repeated and to indicate an erase failure if a maximum number of times is reached.
14. The NVM system of claim 13 , wherein the maximum number of times is one.
15. The NVM system of claim 13 , wherein the controller circuitry is further configured to indicate an erase failure only if a number of NVM cells having threshold voltages that exceed the check voltage level exceeds a threshold value.
16. The NVM system of claim 11 , wherein the embedded erase operation further includes a pre-programming operation configured to cause the NVM cells to have threshold voltages above a program verify voltage level.
17. The m NVM system of claim 11 , wherein the check voltage level is larger than the erase verify voltage level by 200 millivolts or less.
18. The NVM system of claim 11 , wherein the check voltage level is lower than a read voltage level for the NVM system.
19. The NVM system of claim 11 , wherein the check voltage level is adjustable.
20. The NVM system of claim 11 , wherein the controller circuitry is further configured to determine if an additional voltage check is enabled for the NVM system prior to the comparison of threshold voltages for the NVM cells to the check voltage level.
21. The method of claim 1 , further comprising repeating the comparing step if the performing step is repeated.
22. The method of claim 21 , further comprising indicating an erase pass or an erase failure after the performing, comparing, and repeating steps.
23. The system of claim 11 , wherein the controller circuitry is further configured to repeat a comparison of threshold voltages for the NVM cells to the check voltage level after a repeated embedded erase operation.
24. The system of claim 23 , wherein the controller circuitry is further configured to indicate an erase pass or an erase failure after the embedded erase operation, comparison, and any repeated embedded erase operation and comparison.