Parallel shunt paths in thermally assisted magnetic memory cells
View Patent ↗A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.
1. A method of fabricating a thermally assisted memory cell, the method comprising:
patterning a magnetic tunnel junction (MTJ) structure on a substrate;
depositing a thermally conductive layer over the MTJ structure to form a parallel shunt path;
depositing an electrical contact both on top of the thermally conductive layer and on top of the MTJ structure.
2. The method as claimed in claim 1 further comprising depositing an insulating layer over the thermally conductive layer.
3. The method as claimed in claim 1 further comprising depositing an insulating passivation layer over the MTJ structure.
4. The method as claimed in claim 2 further comprising exposing the MTJ structure and the thermally conductive layer.
5. The method as claimed in claim 4 wherein the MTJ structure and the thermally conductive layer are exposed via chemical mechanical polishing/planarization (CMP).
6. The method as claimed in claim 3 further comprising selectively etching the insulating passivation layer.