Semiconductor device
The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101 , an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113 , and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101 . The interconnect component 101 has a constitution where an interconnect layer 103 , a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.
1. A semiconductor device comprising:
a wiring member having a first surface and a second surface opposite the first surface, a plurality of wirings being formed in the wiring member, a plurality of external terminals being arranged on the second surface;
a first semiconductor chip including a memory element, and having a first main surface on which a plurality of first electrodes are formed; and
a second semiconductor chip including a logic circuit adapted for controlling the first semiconductor chip, and having a second main surface on which a plurality of second electrodes and a plurality of third electrodes are formed,
wherein the first semiconductor chip is mounted over the first surface of the wiring member such that the first main surface of the first semiconductor chip faces the first surface of the wiring member, and such that the first semiconductor chip is located over the second semiconductor chip,
all of the first electrodes of the first semiconductor chip are electrically connected with the second electrodes of the second semiconductor chip, respectively, and not electrically connected with the external terminals of the wiring member, and
the third electrodes of the second semiconductor chip are electrically connected with the external terminals via the wirings of the wiring member, respectively.
2. The semiconductor device according to claim 1 , wherein in a cross sectional view, each of the third electrodes is arranged closer to a peripheral portion of the second main surface than the second electrodes.
3. The semiconductor device according to claim 2 , wherein, in the cross sectional view, a pitch between the second electrodes adjacent to each other is smaller than a pitch between the third electrodes adjacent to each other.
4. The semiconductor device according to claim 3 , wherein, in the cross sectional view, a pitch between the first electrodes adjacent to each other is the same as the pitch between the second electrodes adjacent to each other.
5. The semiconductor device according to claim 1 , wherein, in the cross sectional view, a pitch between the second electrodes adjacent to each other is smaller than a pitch between the third electrodes adjacent to each other.
6. The semiconductor device according to claim 5 , wherein, in the cross sectional view, a pitch between the first electrodes adjacent to each other is the same as the pitch between the second electrodes adjacent to each other.
7. The semiconductor device according to claim 1 , wherein, in a cross sectional view, a width of the second semiconductor chip is smaller than a width of the first semiconductor chip.
8. The semiconductor device according to claim 1 , wherein, in a cross sectional view, a thickness of the second semiconductor chip is thinner than a thickness of the first semiconductor chip.
9. The semiconductor device according to claim 1 , wherein a first surface of the wiring member with which the first semiconductor chip does not overlap is sealed by a first sealing resin.
10. The semiconductor device according to claim 1 , wherein a second sealing resin is filled between the wiring member and the second main surface of the second semiconductor chip.
11. The semiconductor device according to claim 1 , wherein the wiring member has an insulating layer, and the wirings are formed on the insulating layer.
12. The semiconductor device according to claim 1 , wherein each of the external terminals is a solder bump.
13. A semiconductor device comprising:
a wiring member having a first surface and a second surface opposite the first surface, a plurality of wirings being formed in the wiring member, a plurality of external terminals being arranged on the second surface;
a first semiconductor chip including a first memory element, and having a first obverse surface on which a plurality of first electrodes are formed and a first reverse surface opposite the first obverse surface;
a second semiconductor chip including a second memory element, and having a second obverse surface on which a plurality of second electrodes are formed and a second reverse surface opposite the second obverse surface; and
a third semiconductor chip including a logic circuit for controlling the first and second semiconductor chips, and having a third main surface on which a plurality of third electrodes and a plurality of fourth electrodes are formed,
wherein the first semiconductor chip is mounted over the second reverse surface of the second semiconductor chip such that the first obverse surface of the first semiconductor chip faces the second reverse surface of the second semiconductor chip, and such that the first semiconductor chip is located over the second and third semiconductor chips,
the second semiconductor chip is mounted over the first surface of the wiring member such that the second obverse surface of the second semiconductor chip faces the first surface of the wiring member, and such that the second semiconductor chip is located over the third semiconductor chip,
all of the first electrodes of the first semiconductor chip are electrically connected with the second electrodes of the second semiconductor chip, respectively, and not electrically connected with the external terminals of the wiring member,
all of the second electrodes of the second semiconductor chip are electrically connected with the third electrodes of the third semiconductor chip, respectively, and not electrically connected with the external terminals of the wiring member,
the fourth electrodes of the third semiconductor chip are electrically connected with the external terminals via the wirings of the wiring member, respectively, and
in a cross sectional view, each of the fourth electrodes is arranged closer to a peripheral portion of the third main surface than the third electrodes.
14. The semiconductor device according to claim 13 ,
wherein a plurality of conductive through-holes, which penetrate from one of the second obverse surface side and the second reverse surface side toward the other side and electrically connected with the second electrodes, respectively, are formed in the second semiconductor chip, and
the first electrodes of the first semiconductor chip are electrically connected with the second electrodes of the second semiconductor chip via the conductive through-holes, respectively.
15. The semiconductor device according to claim 14 , wherein the first and second semiconductor chips are a same kind of memory chip.
16. The semiconductor device according to claim 13 , wherein, in a cross sectional view, a pitch between the third electrodes adjacent to each other is smaller than a pitch between the fourth electrodes adjacent to each other.
17. The semiconductor device according to claim 16 , wherein, in the cross sectional view, a pitch between the first electrodes adjacent to each other and a pitch between the second electrodes adjacent to each other is the same as the pitch between the third electrodes adjacent to each other.