Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, the method comprising forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times, the cycle comprising:

forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by performing supplying a first precursor gas containing the predetermined element and the halogen group to the substrate and supplying a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and

forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition in which the borazine ring skeleton in the borazine compound is maintained.

2. The method of claim 1 , wherein in the act of forming the second layer, the halogen group contained in the first layer is reacted with a ligand contained in the borazine compound.

3. The method of claim 1 , wherein in the act of forming the second layer, the halogen group contained in the first layer is reacted with a ligand contained in the borazine compound to separate the halogen group reacted with the ligand from the first layer and separate the ligand reacted with the halogen group from the borazine compound.

4. The method of claim 1 , wherein in the act of forming the second layer, the halogen group contained in the first layer is reacted with a ligand contained in the borazine compound to separate the halogen group reacted with the ligand from the first layer and separate the ligand reacted with the halogen group from the borazine compound, thereby bonding the borazine compound with the ligand separated therefrom and the predetermined element contained in the first layer.

5. The method of claim 1 , wherein in the act of forming the second layer, the halogen group contained in the first layer is reacted with a ligand contained in the borazine compound to separate the halogen group reacted with the ligand from the first layer and separate the ligand reacted with the halogen group from the borazine compound, thereby bonding a portion of a borazine ring of the borazine compound with the ligand separated therefrom and the predetermined element contained in the first layer.

6. The method of claim 1 , wherein in the act of forming the second layer, the halogen group contained in the first layer is reacted with a ligand contained in the borazine compound to separate the halogen group reacted with the ligand from the first layer and separate the ligand reacted with the halogen group from the borazine compound, thereby bonding nitrogen constituting a borazine ring of the borazine compound with the ligand separated therefrom and the predetermined element contained in the first layer.

7. The method of claim 1 , wherein the cycle further comprises modifying the second layer and adjusting nitrogen and carbon components of the second layer by supplying a nitriding gas to the substrate and nitriding the second layer under a condition in which the borazine ring skeleton in the second layer is maintained.

8. The method of claim 1 , wherein the cycle further comprises modifying the second layer and adjusting nitrogen and carbon components of the second layer by supplying a reaction gas containing carbon and nitrogen to the substrate under a condition in which the borazine ring skeleton in the second layer is maintained.

9. The method of claim 1 , wherein the cycle further comprises forming a third layer containing the predetermined element, nitrogen and the borazine ring skeleton, or a third layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a nitriding gas to the substrate and nitriding the second layer to modify the second layer under a condition in which the borazine ring skeleton in the second layer is maintained,

wherein in the act of forming the thin film, a thin film containing the predetermined element, nitrogen and the borazine ring skeleton, or a thin film containing the predetermined element, carbon, nitrogen and the borazine ring skeleton is formed on the substrate.

10. The method of claim 9 , wherein in the act of forming the third layer, carbon contained in the second layer is at least partially separated from the second layer.

11. The method of claim 1 , wherein in the act of forming the first layer, the act of supplying the first precursor gas and the act of supplying the second precursor gas are alternately performed for the second predetermined number of times.

12. The method of claim 1 , wherein in the act of forming the first layer, the act of supplying the first precursor gas and the act of supplying the second precursor gas are set as one set and the set is performed for the second predetermined number of times.

13. The method of claim 1 , wherein in the act of forming the first layer, the act of supplying the first precursor gas and the act of supplying the second precursor gas are simultaneously performed for the second predetermined number of times.

14. The method of claim 1 , wherein the predetermined element comprises a semiconductor element or a metal element.

15. The method of claim 1 , wherein the predetermined element comprises a silicon element.

16. A substrate processing apparatus, comprising:

a process chamber configured to accommodate a substrate;

a heater configured to heat the substrate in the process chamber;

a first precursor gas supply system configured to supply a first precursor gas containing a predetermined element and a halogen group to the substrate in the process chamber;

a second precursor gas supply system configured to supply a second precursor gas containing the predetermined element and an amino group to the substrate in the process chamber;

a reaction gas supply system configured to supply a reaction gas containing a borazine compound to the substrate in the process chamber;

a pressure adjusting unit configured to adjust an internal pressure of the process chamber; and

a control unit configured to control the first precursor gas supply system, the second precursor gas supply system, the reaction gas supply system, the heater and the pressure adjusting unit such that a thin film containing the predetermined element, carbon, nitrogen and a borazine ring skeleton is formed on the substrate by performing a cycle for a first predetermined number of times, the cycle comprising:

forming a first layer containing the predetermined element, the halogen group, carbon and nitrogen by performing supplying the first precursor gas to the substrate in the process chamber and supplying the second precursor gas to the substrate in the process chamber, for a second predetermined number of times; and

forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying the reaction gas to the substrate in the process chamber and allowing the first layer to react with the borazine compound to modify the first layer under a condition in which the borazine ring skeleton in the borazine compound is maintained.

17. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate in a process chamber of a substrate processing apparatus by performing a cycle for a first predetermined number of times, the cycle comprising:

forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by performing supplying a first precursor gas containing the predetermined element and the halogen group to the substrate in the process chamber and supplying a second precursor gas containing the predetermined element and an amino group to the substrate in the process chamber, for a second predetermined number of times; and

forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate in the process chamber and allowing the first layer to react with the borazine compound to modify the first layer under a condition in which the borazine ring skeleton in the borazine compound is maintained.