Cu—Ga target, method of producing same, light-absorbing layer formed from Cu—Ga based alloy film, and CIGS system solar cell having the light-absorbing layer
A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm 2 or more applied to the sintered mixed raw material powder. Provided are a sputtering target having very low compositional deviation and high density; a method of producing the target; a light-absorbing layer having a Cu—Ga based alloy film; and a CIGS solar cell including the light-absorbing layer.
1. A Cu—Ga alloy sintered compact sputtering target having a structure consisting of a single composition alloy having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the relative density is 80% or higher, and no Ga phase is present.
2. A method of producing a Cu—Ga based alloy sintered compact sputtering target having a structure consisting of a single composition alloy having a Ga concentration of 40 to 50 at % and Cu as the balance, a relative density of 80% or higher, and no Ga phase present within the sputtering target, comprising the steps of:
producing a Cu—Ga alloy raw material powder by melting, cooling and pulverizing Cu and Ga raw materials; and
hot-pressing the raw material powder at a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm 2 or more applied to the sintering mixed raw material powder.
3. A light-absorbing layer comprising a Cu—Ga based alloy film formed on a substrate using the Cu—Ga alloy sintered compact sputtering target according to claim 1 .
4. A CIGS system solar cell comprising the light-absorbing layer according to claim 3 .
5. The method according to claim 2 , wherein compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition.