Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device

1. A substrate processing apparatus comprising:

a processing chamber that accommodates a substrate;

a heating portion that is provided so as to surround an accommodating region of the substrate within the processing chamber;

a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and

a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle, wherein

a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle, and wherein

the gas flow channel of the gas heating mechanism includes plural holes.

2. A substrate processing apparatus according to claim 1 , wherein the plural holes are disposed in a zigzag shape.

3. A substrate processing apparatus according to claim 1 , wherein the gas heating mechanism is provided at a downstream side of an exhaust gas so as to narrow an exhaust gas flow channel.

4. A substrate processing apparatus according to claim 1 , further comprising:

a second gas heating mechanism including a gas flow channel having plural holes at a gas supply upstream side of the gas heating mechanism.

5. A substrate processing apparatus according to claim 4 , wherein a flow channel cross-sectional area of the gas flow channel of the second gas heating mechanism is different from a flow channel cross-sectional area of the gas flow channel of the gas heating mechanism.

6. A substrate processing apparatus according to claim 4 , wherein a number of plural holes of the gas flow channel of the second gas heating mechanism is different from a number of plural holes of the gas flow channel of the gas heating mechanism.

7. A substrate processing apparatus according to claim 1 , wherein an outside diameter of the gas heating mechanism is larger than an outside diameter of the gas nozzle.

8. A substrate processing apparatus according to claim 1 , wherein a lower end of the heating portion is formed to be lower than an upper end of the gas heating mechanism.

9. A substrate processing apparatus according to claim 1 , wherein the processing gas supplied from the gas nozzle to the accommodating region of the substrate is exhausted through a region provided with the gas heating mechanism.

10. A substrate processing apparatus according to claim 1 , wherein the gas heating mechanism is provided at a downstream side of the processing gas in the accommodating region of the substrate so as to narrow a flow channel of the processing gas.

11. A substrate processing apparatus according to claim 1 , further comprising:

a substrate holding body that is accommodated within the processing chamber and that holds plural substrates in a vertical direction so as to form a gap therebetween; and

a cylindrical thermal insulating portion that supports the substrate holding body from below within the processing chamber, wherein

the gas heating mechanism is provided so as to form a gap between the thermal insulating portion and the gas heating mechanism, and the processing gas that is exhausted from the inside of the processing chamber is exhausted through the gap.

12. A substrate processing apparatus according to claim 1 , wherein a center line of the gas nozzle is disposed at a position further away from the substrate than a center line of the gas heating mechanism.

13. A substrate processing apparatus according to claim 1 , wherein the gas nozzle and the gas heating mechanism are formed as a separate member.

14. A substrate processing apparatus according to claim 1 , wherein the gas nozzle and the gas heating mechanism are formed integrally with each other.

15. A method for manufacturing a substrate, comprising:

accommodating a substrate within a processing chamber;

starting heating by a heating portion provided so as to surround an accommodating region of the substrate within the processing chamber, and raising a temperature of the substrate to a predetermined temperature;

supplying heated processing gas from a gas heating mechanism through a gas nozzle into the processing chamber and processing the substrate, the gas heating mechanism being provided inside the heating portion and supplying a processing gas from an upstream side of the gas nozzle that supplies the processing gas to the accommodating region of the substrate into the gas nozzle, and being configured such that a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle; and

unloading the substrate after the processing from the inside of the processing chamber; wherein

the gas flow channel of the gas heating mechanism includes plural holes.

16. A method for manufacturing a semiconductor device, comprising:

accommodating a substrate within a processing chamber;

starting heating by a heating portion provided so as to surround an accommodating region of the substrate within the processing chamber, and raising a temperature of the substrate to a predetermined temperature;

supplying heated processing gas from a gas heating mechanism through a gas nozzle into the processing chamber and processing the substrate, the gas heating mechanism being provided inside the heating portion and supplying a processing gas from an upstream side of the gas nozzle that supplies the processing gas to the accommodating region of the substrate into the gas nozzle, and being configured such that a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle; and

unloading the substrate after the processing from the inside of the processing chamber; wherein

the gas flow channel of the gas heating mechanism includes plural holes.