Pressure sensor device having bump chip carrier (BCC)
View Patent ↗A pressure sensor device is assembled by forming cavities on a surface of a metal sheet and then forming an electrically conductive pattern having traces and bumps over the cavities. An insulating layer is formed on top of the pattern and then processed to form exposed areas and die attach areas on the surface of the metal sheet. The exposed areas are plated with a conductive metal and then electrically connected to respective ones of the bumps. A gel is dispensed on the die attach areas and sensor dies are attached to respective die attach areas. One or more additional semiconductor dies are attached to the insulating layer and bond pads of these dies are electrically connected to the exposed plated areas. A molding compound is dispensed such that it covers the sensor die and the additional dies. The metal sheet is removed to expose outer surfaces of the bumps.
1. A pressure sensor device, comprising:
a carrier having a first surface and a second surface, wherein the first surface comprises a die attach area and a plurality of bond pads and the second surface comprises a plurality of electrically conductive bumps integral with the carrier, wherein a through hole is located within the die attach area;
a piezo resistive transducer (PRT) semiconductor die having an active side attached to the carrier at the die attach area and electrically coupled to the bond pads of the carrier, wherein at least a part of the active side of the PRT semiconductor die is exposed in the through hole;
a gel material deposited within the through hole and covering the at least a part of the active side of the PRT semiconductor die; and
a mold compound covering the PRT semiconductor die and the bond pads.
2. The pressure sensor device of claim 1 , wherein outer surfaces of the electrically conductive bumps are exposed.
3. The pressure sensor device of claim 1 , wherein the electrically conductive bumps comprise filled cavities having an electrically insulating layer plated with a conductive metal.
4. The pressure sensor device of claim 3 , wherein the electrically insulating layer comprises a solder resist film.
5. The pressure sensor device of claim 3 , wherein the conductive metal comprises gold, nickel and copper.
6. The pressure sensor device of claim 1 , wherein the bond pads are formed of gold.
7. The pressure sensor device of claim 1 , further comprising one or more semiconductor dies attached to the carrier and electrically coupled to respective ones of the bond pads of the carrier.
8. The pressure sensor device of claim 7 , wherein bond pads of the semiconductor dies are electrically coupled to the respective bond pads of the carrier with bond wires.
9. The pressure semiconductor device of claim 1 , wherein the gel material comprises silicon-based gel.
10. The pressure sensor device of claim 1 , wherein the PRT semiconductor die is attached and electrically connected to the carrier by gold studs, or copper pillars.