Sequential wafer bonding
View Patent ↗Embodiments of methods of fabricating a sensor device includes attaching a first wafer to a sensor wafer with a first bond material, and attaching a second wafer to the sensor wafer with a second bond material, the second bond material having a lower bonding temperature than the first bond material. After attaching the second wafer, an opening (e.g., a trench cut) through the second wafer is formed, and an adhesive material is provided through the opening to further secure the second wafer to the sensor wafer. Embodiments of sensor devices formed using such methods include a first device cavity having a first pressure, and a second device cavity having a second pressure.
1. A method of fabricating a sensor device, the method comprising:
attaching a first wafer to a sensor wafer with a first bond material;
attaching a second wafer to the sensor wafer with a second bond material, the second bond material having a lower bonding temperature than the first bond material;
after attaching the second wafer, forming an opening through the second wafer; and
providing an adhesive material through the opening to further secure the second wafer to the sensor wafer.
2. The method of claim 1 , wherein the first bond material comprises an aluminum-germanium (AlGe) alloy.
3. The method of claim 1 , wherein the second bond material is selected from the group consisting of a tin-silver-copper (SnAgCu) alloy, a tin-antimony (SnSb) alloy, a lead-tin (PbSn) alloy, and a lead-tin-silver (PbSnAg) alloy.
4. The method of claim 3 , wherein:
the second bond material is arranged as a sealing ring disposed along a die perimeter on the sensor wafer; and
the opening is disposed outside of the sealing ring.
5. The method of claim 1 , wherein:
forming the opening comprises implementing a trench cut through the second wafer, which forms a groove in the sensor wafer; and
providing the adhesive material fills the groove in the sensor wafer with the adhesive material.
6. The method of claim 5 , wherein the trench cut is positioned along a die scribe line.
7. The method of claim 1 , further comprising attaching solder balls to the first wafer or the second wafer, the solder balls having a bonding temperature no lower than the bonding temperature of the second bond material.
8. The method of claim 1 , further comprising attaching solder balls to the first wafer or the second wafer, the solder balls comprising the second bond material.
9. The method of claim 1 , wherein:
attaching the first wafer is implemented at a first pressure to define a first device cavity at the first pressure for a die on the sensor wafer; and
attaching the second wafer is implemented at a second pressure higher than the first pressure to define a second device cavity at the second pressure for the die.
10. The method of claim 9 , further comprising, before attaching the second wafer, forming a vent hole through the sensor wafer, wherein the second bond material is arranged in a seal ring disposed between the adhesive material and the vent hole.
11. The method of claim 1 , wherein the adhesive material comprises an underfill epoxy material.
12. A method of fabricating a sensor device, the method comprising:
attaching a first cap wafer to a sensor wafer with a first bond material, the sensor wafer comprising a plurality of die, the first bond material being arranged to define a first device cavity for each die of the plurality of die;
attaching a second cap wafer to the sensor wafer with a second bond material, the second bond material being arranged to define a second device cavity for each die of the plurality of die, the second bond material having a lower bonding temperature than the first bond material;
after attaching the second cap wafer, forming one or more openings through the second cap wafer along die scribe lines; and
providing an underfill material through the one or more openings to further secure the second cap wafer to the sensor wafer.
13. The method of claim 12 , wherein the first bond material comprises an aluminum-germanium (AlGe) alloy, and wherein the second bond material is selected from the group consisting of a tin-silver-copper (SnAgCu) alloy, a tin-antimony (SnSb) alloy, a lead-tin (PbSn) alloy, and a lead-tin-silver (PbSnAg) alloy.
14. The method of claim 12 , wherein:
the second bond material is arranged in a respective sealing ring disposed along a perimeter of each die; and
each opening formed by one of the trench cuts is disposed outside of the respective sealing ring.
15. The method of claim 12 , wherein:
forming the one or more openings comprises implementing one or more trench cuts, which forms one or more grooves in the sensor wafer; and
providing the underfill material fills the one or more grooves in the sensor wafer with the underfill material.