TRANSISTOR WITH BONDED GATE DIELECTRIC
A method for forming a semiconductor device includes forming a dielectric layer on a first substrate and wafer bonding the dielectric layer of the first substrate to a second substrate including SiC with a passivating layer formed on the SiC. A portion of the first substrate is removed from a side opposite the dielectric layer. The dielectric layer is patterned to form a gate dielectric for a field effect transistor formed on the second substrate.
1 . A semiconductor device, comprising:
a SiC substrate;
a passivation layer of silicon oxide directly on the SiC substrate having a thickness of 2 nm to 10 nm;
a thermally grown dielectric formed directly on a silicon layer and wafer bonded to the SiC such that the thermally grown dielectric forms a gate dielectric, the thermally grown dielectric is composed of silicon oxide and has a thickness ranging from 50 nm to 500 nm, wherein the thermally grown dielectric that provides the gate dielectric is directly coupled to the passivation layer by a bonded interface;
a gate conductor provided directly on the gate dielectric; and
source and drain regions formed in the SiC substrate adjacent to the gate dielectric.
2 . The device as recited in claim 1 , wherein the gate conductor includes the silicon layer.
3 . (canceled)
4 . (canceled)
5 . (canceled)
6 . (canceled)
7 . (canceled)
8 . The semiconductor device of claim 1 , wherein the passivation layer has ends that are aligned with edges of the gate conductor.
9 . The semiconductor device of claim , wherein the passivation layer extends across an upper surface of the source and drain regions.
10 . (canceled)
11 . The semiconductor device of claim 1 , wherein the gate conductor is comprised of silicon, silicon germanium or a combination thereof.
12 . The semiconductor device of claim 1 , wherein the gate conductor is comprised of copper, tungsten, titanium, aluminum, doped polysilicon, organic conductors or a combination thereof.