Magnetic tunnel junctions and methods of forming magnetic tunnel junctions
A method of forming a line of magnetic tunnel junctions includes forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material. The substrate has alternating outer regions of reactant source material and insulator material along at least one cross-section. The reference material is patterned into a longitudinally elongated line passing over the alternating outer regions. The recording material is subjected to a set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along the line and to form magnetic tunnel junctions along the line which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions. Other methods, and lines of magnetic tunnel junctions independent of method, are disclosed.
1. A method of forming a line of magnetic tunnel junctions, comprising:
forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material; the substrate comprising alternating outer regions of reactant source material and insulator material along at least one cross-section; the reactant source material comprising a reactant that will react with the recording material to form dielectric material when subjected to a set of temperature and pressure conditions;
patterning the reference material into a longitudinally elongated line passing over the alternating outer regions; and
subjecting the recording material to the set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along the line and to form magnetic tunnel junctions along the line which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions.
2. The method of claim 1 wherein the insulator material is not reactive with the recording material to form the dielectric material when subjected to the set of temperature and pressure conditions.
3. The method of claim 1 wherein the reacting at least in part occurs after the patterning.
4. The method of claim 1 wherein the reacting occurs before the patterning.
5. The method of claim 4 wherein the reacting occurs spontaneously upon a deposition of the recording material directly against the reactant source material.
6. The method of claim 4 wherein the reacting occurs after a deposition of the recording material directly against the reactant source material.
7. The method of claim 4 wherein the reacting at least in part occurs after the patterning.
8. The method of claim 7 wherein the reacting occurs spontaneously upon a deposition of the recording material directly against the reactant source material.
9. The method of claim 1 wherein the reacting extends the dielectric material regions completely transversally through the recording material.
10. The method of claim 1 wherein the reactant comprises oxygen.
11. The method of claim 10 wherein the reactant source material comprises at least one of a silicon oxide and an aluminum oxide.
12. The method of claim 1 wherein the reactant comprises nitrogen.
13. The method of claim 12 wherein the reactant source material comprises at least one of a silicon nitride and a boron nitride.
14. The method of claim 1 wherein the reactant source material comprises a stoichiometric compound having a stoichiometric formula, the reactant comprising an atom of the formula, the reactant source material comprising an excess of a stoichiometric amount of the atom in the formula.
15. The method of claim 1 wherein the reactant source material comprises one of a dielectric nitride and a dielectric oxide and the insulator material comprises the other of dielectric nitride and dielectric oxide.
16. The method of claim 1 wherein the reactant source material and the insulator material each comprises silicon oxide or each comprises silicon nitride.
17. The method of claim 16 wherein the insulator material is not reactive with the recording material to form the dielectric material when subjected to the set of temperature and pressure conditions.
18. The method of claim 1 wherein the set of temperature and pressure conditions are ambient room temperature to about 350° C., and greater than about 10 Torr, respectively.
19. The method of claim 18 wherein temperature of the set is at least 50° C.
20. The method of claim 1 comprising forming anisotropically etched sidewall spacers over sidewalls of the line.
21. The method of claim 1 wherein the alternating outer regions individually comprise longitudinally elongated and parallel lines that angle relative to the line of reference material.
22. The method of claim 21 wherein the longitudinally elongated and parallel lines angle substantially perpendicularly relative to the line of reference material.
23. The method of claim 1 wherein,
the patterning of the reference material is into a plurality of longitudinally elongated lines that individually pass over the alternating outer regions; and
the subjecting of the recording material to the set of temperature and pressure conditions reacts with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along individual of the lines and to form magnetic tunnel junctions along individual of the lines which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions in that line.
24. The method of claim 1 wherein the alternating outer regions comprise islands of insulator material within an expanse of outer reactant source material.
25. The method of claim 1 wherein the patterning comprises etching.
26. The method of claim 25 comprising etching the non-magnetic material to be longitudinally elongated with and part of the longitudinally elongated line of the reference material that passes over the alternating outer regions.
27. The method of claim 26 comprising etching the recording material to be longitudinally elongated with and part of the longitudinally elongated line of the reference material that passes over the alternating outer regions.
28. The method of claim 25 wherein the process is devoid of etching of the recording material.
29. The method of claim 1 wherein the alternating outer regions of the reactant source material and the insulator material having planar elevationally outermost surfaces.
30. The method of claim 29 wherein the surfaces are coplanar.
31. The method of claim 1 wherein the outer regions of reactant source material are laterally narrower than the outer regions of insulator material along the cross-section.
32. A method of forming lines of magnetic tunnel junctions, comprising:
forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material; the substrate comprising islands of outer regions of insulator material within an expanse of outer reactant source material; the reactant source material comprising a reactant that will react with the recording material to form dielectric material when subjected to a set of temperature and pressure conditions;
etching the reference material to form a plurality of longitudinally elongated lines of the reference material that individually pass over respective pluralities of different ones of the islands, the recording material not being etched to form lines within the expanse; and
subjecting the recording material to the set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along individual of the lines and to form magnetic tunnel junctions along individual of the lines which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions.
33. The method of claim 32 wherein the islands and outer reactant source material form a lattice-like pattern.
34. The method of claim 32 wherein the non-magnetic material is not etched to form lines within the expanse.
35. The method of claim 34 wherein the non-magnetic material comprises a layer that completely covers the expanse.
36. The method of claim 32 wherein the dielectric material is formed laterally outward of the lines.
37. The method of claim 36 wherein dielectric material is formed continuously about the islands.