Cascode structures with GaN cap layers
View Patent ↗A transistor device including a cap layer is described. One embodiment of such a device includes cap layer between a gate and a semiconductor layer. In one embodiment, the thickness of the cap layer is between 5 nm and 100 nm. In another embodiment, the cap layer can be doped, such as delta-doped or doped in a region remote from the semiconductor layer. Devices according to the present invention can show capacitances which are less drain bias dependent, resulting in improved linearity.
1. A multi-gate transistor, comprising:
a plurality of active semiconductor layers on a substrate;
a source and a drain in contact with at least one of said plurality of active semiconductor layers;
a first gate between said source and drain;
a second gate between said first gate and said drain; and
a cap layer between and contacting said second gate and said plurality of active semiconductor layers, wherein said cap layer comprises a semiconductor material, wherein said first gate contacts at least one active semiconductor layer in said plurality of active semiconductor layers and said second gate is separated from said plurality of active semiconductor layers by said cap layer.
2. The multi-gate transistor of claim 1 , wherein said cap layer comprises a Group-III nitride.
3. The multi-gate transistor of claim 1 , wherein said cap layer has a non-zero thickness equal to or less than about 100 nm.
4. The multi-gate transistor of claim 1 , wherein said cap layer has a thickness equal to or greater than about 5 nm.
5. The multi-gate transistor of claim 1 , wherein at least part of said cap layer is doped.
6. The multi-gate transistor of claim 5 , wherein said cap layer is delta-doped.
7. The multi-gate transistor of claim 5 , wherein said cap layer is delta-doped at the interface between said cap layer and said plurality of active semiconductor layers.
8. The multi-gate transistor of claim 5 , wherein said cap layer comprises one or more doped regions remote from said plurality of active semiconductor layers.
9. The multi-gate transistor of claim 1 , further comprising a spacer layer over at least part of said second gate.
10. The multi-gate transistor of claim 1 , further comprising a first field plate.
11. The multi-gate transistor of claim 10 , wherein said first field plate is over said second gate.
12. The multi-gate transistor of claim 10 , wherein said first field plate is connected to said source.
13. The multi-gate transistor of claim 1 , wherein said second gate is connected to said source.
14. The multi-gate transistor of claim 1 , wherein said second gate is grounded.
15. The multi-gate transistor of claim 1 , wherein said second gate is longer than said first gate.
16. The multi-gate transistor of claim 1 , wherein at least one of said first gate and said second gate comprises an overhanging section.
17. The multi-gate transistor of claim 1 , wherein at least one of said first and second gates is at least partially recessed into at least one of said plurality of active semiconductor layers.
18. The multi-gate transistor of claim 1 , wherein said multi-gate transistor has a first stage and a second stage; and
wherein a threshold voltage of said second stage is different than a threshold voltage of said first stage.
19. The multi-gate transistor of claim 18 , wherein said threshold voltage of said second stage is more negative than said threshold voltage of said first stage.
20. The multi-gate transistor of claim 1 , wherein said second gate at least partially overlaps with said first gate, and further comprising a spacer layer between the overlapping portions of said first and second gates.
21. A cascode structure, comprising:
a first stage comprising a first gate;
a second stage comprising a second gate;
a plurality of active semiconductor layers;
wherein said second gate is separated from at least some of said plurality of active semiconductor layers by a cap layer, wherein said cap layer comprises gallium nitride (GaN);
wherein said cap layer is shaped to define an aperture; and
wherein at least a portion of said first gate is within said aperture and contacting at least one active semiconductor layer in said plurality of active semiconductor layers.
22. The cascode structure of claim 21 , wherein the thickness of said cap layer is greater than or equal to about 5nm and less than or equal to about 100 nm.
23. The cascode structure of claim 21 , wherein said second stage has a more negative threshold voltage than said first stage.
24. The cascode structure of claim 21 , wherein said cascode structure is an amplifier.
25. An integrated circuit comprising a transistor, said transistor comprising:
a plurality of active semiconductor layers on a substrate;
a source and a drain on at least one of said plurality of active semiconductor layers;
a first gate between said source and drain;
a second gate between said first gate and said drain; and
a cap layer between and contacting said second gate and said plurality of active semiconductor layers wherein said cap layer is on less than all of said plurality of active semiconductor layers between said first gate and said drain.
26. The multi-gate transistor of claim 1 , wherein said first gate is directly on at least one of said plurality of active semiconductor layers.
27. The multi-gate transistor of claim 1 , wherein said cap layer is directly between said second gate and a top one of said plurality of active semiconductor layers.
28. The multi-gate transistor of claim 1 , wherein said cap layer is shaped to define an aperture; and
wherein said first gate is at least partially within said aperture.