Apparatus and method for high-throughput chemical vapor deposition
View Patent ↗A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.
1. A method, comprising:
positioning a substrate such that a surface of the substrate faces a first one of a plurality of cavities of a chamber body, the plurality of cavities of the chamber body being separate from one another;
delivering a first process gas into the first cavity via an inlet disposed in a wall of the first cavity and evacuating the first process gas from the first cavity via an outlet disposed in the wall of the first cavity so as to deposit a first layer on the substrate;
positioning the substrate such that the surface of the substrate faces a second one of the plurality of cavities of the chamber body;
delivering a purge gas into the second cavity via an inlet disposed in a wall of the second cavity and evacuating the purge gas from the second cavity via an outlet disposed in the wall of the second cavity; and
delivering an inert gas into a gap between a first surface of the chamber body and a first surface of a susceptor, the first surface of the chamber body and the first surface of the susceptor being parallel to one another, so as to (i) prevent the first process gas in the first cavity from entering the second cavity through the gap, and (ii) prevent the purge gas in the second cavity from entering the first cavity through the gap.
2. The method of claim 1 , further comprising:
positioning the substrate such that the surface of the substrate faces a third one of the plurality of cavities of the chamber body; and
delivering a second process gas into the third cavity via an inlet disposed in a wall of the third cavity and evacuating the second process gas from the third cavity via an outlet disposed in the wall of the third cavity so as to deposit a second layer on the substrate.
3. The method of claim 1 , wherein the substrate is disposed on a substrate holder, and the substrate holder is disposed in a cavity of the susceptor.
4. The method of claim 3 , wherein the surface of the substrate is positioned to face the first cavity by rotating the susceptor.
5. The method of claim 4 , wherein the first process gas flows from the inlet to the outlet of the first cavity in a direction perpendicular to a path traversed by the substrate.
6. The method of claim 1 , wherein the plurality of cavities of the chamber body are disposed in the first surface of the chamber body.
7. The method of claim 1 , wherein while the surface of the substrate faces the first cavity, the surface of the substrate does not directly face the inlet of the first cavity.
8. The method of claim 1 , wherein while the surface of the substrate faces the first cavity, the surface of the substrate does not directly face the outlet of the first cavity.
9. The method of claim 1 , wherein the inert gas is delivered into the gap via an inlet disposed on the first surface of the chamber body.
10. The method of claim 1 , wherein the inert gas is evacuated from the gap via an outlet disposed on the first surface of the chamber body.