Patent Assignment
Reel/Frame 045444/0996
Change of Name
Recorded: 2018-01-30
Pages: 4
Assignor
EUGENE TECHNOLOGY, INC.
Executed: 2017-11-16
Assignee
EUGENUS, INC.
677 RIVER OAKS PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties
(24)
Vertically-Stacked Process Reactor and Cluster Tool System for Atomic Layer Deposition
Patent:
5,879,459 →
Application:
08/920,708 →
Method and Apparatus for Providing Uniform Gas Delivery to Substrates in Cvd and Pecvd Processes
Patent:
6,206,972 →
Application:
09/350,417 →
Cvd Reactor and Application Thereof
Patent:
6,309,465 →
Application:
09/381,208 →
Apparatus and Method to Achieve Continuous Interface and Ultrathin Film During Atomic Layer Deposition
Patent:
6,503,330 →
Application:
09/470,279 →
Apparatus and Concept for Minimizing Parasitic Chemical Vapor Deposition During Atomic Layer Deposition
Methods and Procedures for Engineering of Composite Conductive Films by Atomic Layer Deposition
Patent:
7,183,649 →
Application:
10/122,643 →
Method and Apparatus for Flexible Atomic Layer Deposition
Patent:
6,905,547 →
Application:
10/175,556 →
Apparatus and Concept for Minimizing Parasitic Chemical Vapor Deposition During Atomic Layer Deposition
Apparatus and Method to Achieve Continuous Interface and Ultrathin Film During Atomic Layer Deposition
Massively Parallel Atomic Layer Deposition/Chemical Vapor Deposition System
Method and Apparatus for Providing and Integrating a General Metal Delivery Source (Gmds) with Atomic Layer Deposition (Ald)
Method and Apparatus for Providing Uniform Gas Delivery to Substrates in Cvd and Pecvd Processes
Apparatus and Method to Achieve Continuous Interface and Ultrathin Film During Atomic Layer Deposition
Patent:
6,897,119 →
Application:
10/666,694 →
Purged Heater-Susceptor for an Ald/Cvd Reactor
Transient Enhanced Atomic Layer Deposition
Methods and Procedures for Engineering of Composite Conductive by Atomic Layer Deposition
Patent:
7,164,203 →
Application:
11/216,750 →
Process and Apparatus for Depositing Single-Component or Multi-Component Layers and Layer Sequences Using Discontinuous Injection of Liquid and Dissolved Starting Substances via a Multi-Channel Injection Unit
Method for Self-Limiting Deposition of One or More Monolayers
Gas Distributor with Pre-Chambers Arranged in Planes
Apparatus and Method for High-Throughput Chemical Vapor Deposition
Method for Forming Tisin Thin Film Layer by Using Atomic Layer Deposition
Method and Apparatus for Fabricating Dielectric Structures
Device and Method to Control the Uniformity of a Gas Flow in a Cvd or an Ald Reactor or of a Layer Grown Therein
Application:
15/348,883 →
Publication:
US 2018/0128647
Method and Apparatus for Fabricating Dielectric Structures
Application:
61/910,383 →
Related Assignments
(7)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Nov 6, 2014
From: STRZYZEWSKI, PIOTR; BAUMANN, PETER; SCHUMACHER, MARCUS; LINDNER, JOHANNES
To: AIXTRON, INC.
Reel/Frame 034122/0195 →
Change of Name
May 22, 2017
From: GENUS, INC.
To: AIXTRON, INC.
Reel/Frame 042524/0283 →
Assignment of Assignor's Interest
Jan 30, 2018
From: AIXTRON, INC.
To: EUGENE TECHNOLOGY, INC.
Reel/Frame 044767/0357 →
Assignment of Assignor's Interest
Apr 13, 2018
From: AIXTRON SE
To: EUGENUS, INC.
Reel/Frame 045538/0863 →
Change of Name
Apr 13, 2018
From: EUGENE TECHNOLOGY, INC.
To: EUGENUS, INC.
Reel/Frame 045963/0870 →
Change of Name
May 2, 2018
From: AIXTRON AG
To: AIXTRON SE
Reel/Frame 046066/0063 →
Assignment of Assignor's Interest
Jun 29, 2018
From: AIXTRON SE
To: EUGENUS, INC.
Reel/Frame 046244/0478 →