IP Library › Assignment 042524/0283
Patent Assignment
Reel/Frame 042524/0283

Change of Name

Recorded: 2017-05-22 Pages: 7
Assignor
GENUS, INC.
Executed: 2006-03-31
Assignee
AIXTRON, INC.
1139 KARLSTAD DR, SUNNYVALE, CALIFORNIA, 94089
Covered Properties (89)
Method and Apparatus for Deposition of Tungsten Silicides
Patent: 4,565,157 →
Application: 06/480,030 →
Cooled Optical Window for Semiconductor Wafer Heating
Patent: 4,550,684 →
Application: 06/522,638 →
Process for Depositing a Low Resistivity Tungsten Silicon Composite Film on a Substrate
Patent: 4,629,635 →
Application: 06/590,117 →
Non-Magnetic Sputtering Target
Patent: 4,597,847 →
Application: 06/658,738 →
Cooled Optical Window for Semiconductor Wafer Heating
Patent: 4,680,447 →
Application: 06/756,739 →
Interlayer Dielectric Process
Patent: 4,690,746 →
Application: 06/832,836 →
Semiconductor Substrate Heater and Reactor Process and Apparatus
Patent: 4,778,559 →
Application: 06/919,313 →
Low Resistivity Tungsten Silicon Composite Film
Patent: 4,851,295 →
Application: 06/926,968 →
Dial Deposition and Processing Apparatus
Patent: 4,795,299 →
Application: 07/038,540 →
Semiconductor Substrate Treating Method
Patent: 4,956,046 →
Application: 07/251,108 →
Semiconductor Substrate Heater and Reactor Process and Apparatus
Patent: 4,891,335 →
Application: 07/251,115 →
Semiconductor Substrate Heater and Reactor Process and Apparatus
Patent: 4,938,815 →
Application: 07/257,854 →
Semiconductor Wafer Processing Apparatus
Patent: 5,044,314 →
Application: 07/257,855 →
Method and Apparatus for Deposition of Tungsten Silicides
Patent: 4,920,908 →
Application: 07/323,199 →
Perimeter Wafer Seal
Patent: 4,932,358 →
Application: 07/354,636 →
Perimeter Wafer Seal with Gas Exclusion
Application: 07/512,809 →
Differential Pressure Cvd Chuck
Patent: 5,094,885 →
Application: 07/596,512 →
Composite Sputtering Target Structures and Process for Producing Such Structures
Patent: 5,215,639 →
Application: 07/671,164 →
Organic Preclean for Improving Vapor Phase Wafer Etch Uniformity
Application: 07/703,601 →
Purge Gas in Wafer Coating Area Selection
Application: 07/812,734 →
Interchangeable Cvd Chuck Surface
Patent: 5,431,737 →
Application: 07/830,603 →
Method of Selective Etching Native Oxide
Patent: 5,294,568 →
Application: 07/867,299 →
Purge Gas in Wafer Coating Area Selection
Patent: 5,447,570 →
Application: 07/902,995 →
Sacrificial Metal Etchback System
Patent: 5,330,607 →
Application: 07/938,303 →
Film Uniformity by Selective Pressure Gradient Control
Patent: 5,387,289 →
Application: 07/950,088 →
Low-Temperature Low-Stress Blanket Tungsten Film
Patent: 5,272,112 →
Application: 07/973,841 →
Organic Preclean for Improving Vapor Phase Wafer Etch Uniformity
Patent: 5,762,755 →
Application: 07/994,604 →
Selective Plasma Deposition
Patent: 5,858,471 →
Application: 08/724,967 →
Nitrogen-Bearing Cvd Films from NF3 as a Nitrogen Source
Application: 08/756,562 →
Methods for Minimizing as-Deposited Stress in Tungsten Silicide Firms
Patent: 5,963,836 →
Application: 08/759,868 →
Multipurpose Processing Chamber for Chemical Vapor Deposition Processes
Patent: 5,855,675 →
Application: 08/810,255 →
Vertically-Stacked Process Reactor and Cluster Tool System for Atomic Layer Deposition
Patent: 5,879,459 →
Application: 08/920,708 →
Processing Chamber for Atomic Layer Deposition Processes
Patent: 6,174,377 →
Application: 09/225,081 →
Radical-Assisted Sequential Cvd
Patent: 6,200,893 →
Application: 09/267,953 →
Method and Apparatus for Providing Uniform Gas Delivery to Substrates in Cvd and Pecvd Processes
Patent: 6,206,972 →
Application: 09/350,417 →
Apparatus and Methods for Minimizing as-Deposited Stress in Tungsten Silicide Films
Patent: 6,130,159 →
Application: 09/365,988 →
Pecvd and Cvd Processes for Wnx Deposition
Patent: 6,635,570 →
Application: 09/410,109 →
Apparatus and Concept for Minimizing Parasitic Chemical Vapor Deposition During Atomic Layer Deposition
Patent: 6,305,314 →
Application: 09/466,100 →
Apparatus and Method to Achieve Continuous Interface and Ultrathin Film During Atomic Layer Deposition
Patent: 6,503,330 →
Application: 09/470,279 →
Fully Integrated Process for Mim Capacitors Using Atomic Layer Deposition
Patent: 6,551,399 →
Application: 09/480,804 →
Semiconductor Catalytic Layer and Atomic Layer Deposition Thereof
Patent: 6,479,902 →
Application: 09/609,013 →
Method of Copper Interconnect Formation Using Atomic Layer Copper Deposition
Patent: 6,368,954 →
Application: 09/627,352 →
Radical-Assisted Sequential Cvd
Patent: 6,475,910 →
Application: 09/669,063 →
Plasma Generator Assembly for Use in Cvd and Pecvd Processes
Patent: 6,626,998 →
Application: 09/709,228 →
Apparatus and Concept for Minimizing Parasitic Chemical Vapor Deposition During Atomic Layer Deposition
Patent: 6,451,119 →
Application: 09/727,978 →
Publication: US 2001/0000866
Radical-Assisted Sequential Cvd
Patent: 6,451,695 →
Application: 09/747,649 →
Publication: US 2001/0002280
Processing Chamber for Atomic Layer Deposition Processes
Patent: 6,387,185 →
Application: 09/764,035 →
Publication: US 2001/0011526
Method for providing uniform gas delivery to substrates in CVD and PECVD processes
Patent: 6,284,673 →
Application: 09/769,634 →
Publication: US 2001/0002582
Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
Application: 09/939,272 →
Publication: US 2001/0054391
Method for integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
Patent: 6,617,173 →
Application: 09/974,076 →
Method and apparatus for flexible atomic layer deposition
Application: 10/026,354 →
Process for tungsten silicide atomic layer deposition
Application: 10/052,890 →
Publication: US 2003/0190424
Methods and Procedures for Engineering of Composite Conductive Films by Atomic Layer Deposition
Patent: 7,183,649 →
Application: 10/122,643 →
Processing Chamber for Atomic Layer Deposition Processes
Patent: 6,818,067 →
Application: 10/123,293 →
Publication: US 2002/0108714
Method and Apparatus for Flexible Atomic Layer Deposition
Patent: 6,905,547 →
Application: 10/175,556 →
Apparatus and Concept for Minimizing Parasitic Chemical Vapor Deposition During Atomic Layer Deposition
Patent: 6,540,838 →
Application: 10/186,071 →
Publication: US 2002/0162506
Radical-Assisted Sequential Cvd
Patent: 6,638,862 →
Application: 10/213,781 →
Publication: US 2002/0197864
Radical-Assisted Sequential Cvd
Patent: 6,630,401 →
Application: 10/213,914 →
Publication: US 2002/0192954
Radical-Assisted Sequential Cvd
Patent: 6,602,784 →
Application: 10/213,915 →
Publication: US 2002/0192955
Apparatus and Method to Achieve Continuous Interface and Ultrathin Film During Atomic Layer Deposition
Patent: 6,638,859 →
Application: 10/256,899 →
Publication: US 2003/0027431
Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition
Patent: 6,720,259 →
Application: 10/262,992 →
Publication: US 2004/0023516
Massively Parallel Atomic Layer Deposition/Chemical Vapor Deposition System
Patent: 6,902,624 →
Application: 10/282,609 →
Publication: US 2003/0109094
Method and Apparatus for Providing and Integrating a General Metal Delivery Source (Gmds) with Atomic Layer Deposition (Ald)
Patent: 6,863,021 →
Application: 10/295,614 →
Publication: US 2004/0094093
Method and Apparatus for Providing Uniform Gas Delivery to Substrates in Cvd and Pecvd Processes
Patent: 6,616,766 →
Application: 10/335,404 →
Publication: US 2003/0101934
Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
Application: 10/401,646 →
Publication: US 2003/0183171
Method and Apparatus for Providing Uniform Gas Delivery to Substrates in Cvd and Pecvd Processes
Patent: 7,018,940 →
Application: 10/655,682 →
Publication: US 2004/0127067
Apparatus and Method to Achieve Continuous Interface and Ultrathin Film During Atomic Layer Deposition
Patent: 6,897,119 →
Application: 10/666,694 →
Systems and methods for improved gas delivery
Application: 10/678,989 →
Publication: US 2004/0065256
Purged Heater-Susceptor for an Ald/Cvd Reactor
Patent: 7,015,426 →
Application: 10/777,349 →
Publication: US 2004/0211764
Methods and apparatus for cycle time improvements for atomic layer deposition
Application: 10/791,030 →
Publication: US 2005/0016956
Collection of unused precursors in ALD
Application: 10/831,456 →
Publication: US 2005/0016453
Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD)
Application: 11/014,104 →
Publication: US 2005/0103269
Massively parallel atomic layer deposition/chemical vapor deposition system
Application: 11/114,313 →
Publication: US 2005/0274323
Massively parallel atomic layer deposition/chemical vapor deposition system
Application: 11/115,053 →
Publication: US 2005/0281949
Methods and Procedures for Engineering of Composite Conductive by Atomic Layer Deposition
Patent: 7,164,203 →
Application: 11/216,750 →
Methods and Procedures for Engineering of Composite Conductive Films by Atomic Layer Deposition
Patent: 7,129,580 →
Application: 11/216,751 →
Multi-single wafer processing apparatus
Application: 11/224,767 →
Publication: US 2006/0137609
Vaporizer for atomic layer deposition system
Application: 11/351,366 →
Publication: US 2007/0042119
Integration of ferromagnetic films with ultrathin insulating films for fabrication of tunneling devices using atomic layer deposition
Application: 60/239,614 →
Process for tungsten silicide atomic layer deposition
Application: 60/242,033 →
Passivation methods for improved uniformity and repeatability for atomic layer deposition
Application: 60/326,893 →
Massively parallel ALD/CVD system
Application: 60/346,005 →
Methods and apparatus for remote plasma cleaning with improved gas delivery lid assemblies
Application: 60/416,084 →
Purged ALN heater/susceptor
Application: 60/446,892 →
Method and apparatus for cycle time improvements for ALD
Application: 60/455,034 →
Collection of unused precursors in ALD
Application: 60/465,142 →
Transient enhanced ALD
Application: 60/465,143 →
Multi-single wafer processing apparatus
Application: 60/609,598 →
Vaporizer for atomic layer deposition system
Application: 60/652,422 →