Methods and systems for use in grind shape control adaptation

1. A method of grinding wafers, comprising:

determining thickness variations in a wafer;

determining incremental adjustments to spindle alignment based on best fit predictions of wafer shape; and

implementing the incremental adjustments to spindle alignment of a grind module;

wherein said determining of said incremental adjustments to the spindle alignment is at least in part in response to a predictive adjustment, the predictive adjustment causing said incremental adjustments;

wherein said predictive adjustment is determined in response to said determining of said thickness variations in a wafer comprising pregrind wafer thickness measurements of a carrier wafer, comparing the thickness measurements to a target wafer thickness profile, and detennining wafer shape based on wafer size, grind wheel size and said spindle alignment.

2. The method of claim 1 wherein said determining of said incremental adjustments to spindle alignment is at least in part in response to a corrective adjustment, the corrective adjustment further causing said incremental adjustments.

3. The method of claim 1 wherein:

said predictive adjustment is determined in response to said determining of said thickness variations in a wafer comprising pre-grind wafer thickness measurements of a carrier wafer, comparing the thickness measurements to a target wafer thickness profile, and determining wafer shape based on wafer size, grind wheel size and said spindle alignment; and

wherein said corrective adjustment is determined in response to said determining of said thickness variations in a wafer comprising post-grind wafer thickness measurements of a first ground wafer, comparing the thickness measurements to the target wafer thickness profile, and determining wafer shape based on wafer size, grind wheel size and said spindle alignment.