IP Library Granted Patent US 9,036,363
Granted Patent B2
US 9,036,363 · App. 14/042,623 · Granted May 19, 2015

Devices and stacked microelectronic packages with parallel conductors and intra-conductor isolator structures and methods of their fabrication

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Quick Facts
Patent No.
US 9,036,363
App. No.
14/042,623
Granted
May 19, 2015
Kind
B2
Abstract

Embodiments of devices and methods of their manufacture include coupling first and second package surface conductors to a package surface with an intra-conductor insulating structure between the package surface conductors. The package surface conductors extend between and electrically couple sets of pads that are exposed at the package surface. Elongated portions of the package surface conductors are parallel with and adjacent to each other. The intra-conductor insulating structure is coupled between the package surface conductors along an entirety of the parallel and adjacent elongated portions, and the intra-conductor insulating structure electrically insulates the elongated portions of the package surface conductors from each other. Some embodiments may be implemented in conjunction with a stacked microelectronic package that includes sidewall conductors and an intra-conductor insulating structure between and electrically insulating the sidewall conductors from each other.

Claims (19)

1. A device, comprising: a package body having a package surface; multiple pads that are exposed at the package surface and are electrically coupled to one or more electrical components embedded within the package body; a first package surface conductor coupled to the package surface and having a first elongated portion, wherein the first package surface conductor extends between and electrically couples a first set of the pads; a second package surface conductor coupled to the package surface and having a second elongated portion, wherein the first and second elongated portions are parallel with and adjacent to each other, and wherein the second package surface conductor extends between and electrically couples a second set of the pads; and a first intra-conductor insulating structure coupled between the first and second package surface conductors along an entirety of the first and second elongated portions of the first and second package surface conductors, wherein the first intra-conductor insulating structure is configured to electrically insulate the first and second elongated portions of the first and second package surface conductors from each other; the one or more electrical components include a first microelectronic device embedded within a first microelectronic package having a first sidewall, and a second microelectronic device embedded within a second microelectronic package having a second sidewall; the first and second microelectronic packages are stacked in a vertical arrangement; the first set of pads includes a first sidewall pad and a second sidewall pad, wherein the first sidewall pad is positioned at the first sidewall and is electrically coupled with the first microelectronic device through a first device-to-edge conductor, and the second sidewall pad is positioned at the second sidewall and is electrically coupled with the second microelectronic device through a second device-to-edge conductor.

2. The device of claim 1 , wherein the first set of pads include multiple sidewall pads positioned at a sidewall of a single microelectronic package.

3. The device of claim 1 , wherein the first and second elongated portions of the first and second package surface conductors are deposited directly on a package sidewall.

4. The device of claim 1 , wherein the first elongated portion of the first package surface conductor is deposited directly on a package sidewall, and the second elongated portion of the second package surface conductor is not deposited directly on the package sidewall, but instead is deposited on the first intra-conductor insulating structure above the package sidewall and above the first elongated portion of the first package surface conductor.

5. The device of claim 1 , wherein an edge of the first package surface conductor partially underlaps the first intra-conductor insulating structure, and an edge of the second package surface conductor partially overlaps the first intra-conductor insulating structure.

6. The device of claim 1 , wherein edges of the first and second package surface conductors partially overlap the first intra-conductor insulating structure.

7. The device of claim 1 , further comprising:

a second intra-conductor insulating structure deposited on the first intra-conductor insulating structure and at least partially overlapping the first and second package surface conductors; and

a third package surface conductor having a third elongated portion deposited on the second intra-conductor insulating structure above the package surface and above the first and second elongated portions of the first and second package surface conductors.

8. The device of claim 1 , wherein the first and second package surface conductors are formed from one or more conductive materials selected from an electrically conductive adhesive, conductive polymer, a polymer filled with conductive particles, a metal alloy, metal coated organic particles, metal coated ceramic particles, solder paste, solder-filled adhesive, nanoparticle-filled ink, a liquid metal, a metal-containing adhesive, a metal-containing epoxies, electrically-conductive pastes, indium, and bismuth.

9. The device of claim 1 , wherein the first intra-conductor insulating structure is formed from one or more non-conductive materials selected from an epoxy, silicone, a cyanide ester, acrylic, and a polymer adhesive.

10. A stacked microelectronic package, comprising: a first microelectronic package having a first package sidewall, an embedded first microelectronic device, and a first device-to-edge conductor between the first microelectronic device and the first package sidewall, wherein an end of the first device-to-edge conductor that is exposed at the first package sidewall defines a first sidewall pad; a second microelectronic package vertically stacked on the first microelectronic package and having a second package sidewall, an embedded second microelectronic device, and a second device-to-edge conductor between the second microelectronic device and the second package sidewall, wherein an end of the second device-to-edge conductor that is exposed at the second package sidewall defines a second sidewall pad; a first sidewall conductor coupled to the first and second package sidewalls and having a first elongated portion, wherein the first sidewall conductor extends between and electrically couples the first and second sidewall pads; a second sidewall conductor coupled to either or both of the first and second package sidewalls and having a second elongated portion, wherein the first and second elongated portions are parallel with and adjacent to each other, and wherein the second sidewall conductor extends between and electrically couples third and fourth sidewall pads; and a first intra-conductor insulating structure coupled between the first and second sidewall conductors along an entirety of the first and second elongated portions of the first and second sidewall conductors, wherein the first intra-conductor insulating structure is configured to electrically insulate the first and second elongated portions of the first and second sidewall conductors from each other; a second intra-conductor insulating structure deposited on the first intra-conductor insulating structure and at least partially overlapping the first and second sidewall conductors; and a third sidewall conductor having a third elongated portion deposited on the second intra conductor insulating structure above the first and second elongated portions of the first and second sidewall conductors.

11. The stacked microelectronic package of claim 10 , wherein the first and second elongated portions of the first and second sidewall conductors are deposited directly on a package sidewall.

12. The stacked microelectronic package of claim 10 , wherein the first elongated portion of the first sidewall conductor is deposited directly on a package sidewall, and the second elongated portion of the second sidewall conductor is not deposited directly on the package sidewall, but instead is deposited on the first intra-conductor insulating structure above the package sidewall and above the first elongated portion of the first sidewall conductor.

13. A method comprising: coupling a first package surface conductor to a package surface, wherein the first package surface conductor has a first elongated portion, and the first package surface conductor extends between and electrically couples a first set of pads that are exposed at the package surface; coupling a second package surface conductor to the package surface, wherein the second package surface conductor has a second elongated portion, the first and second elongated portions are parallel with and adjacent to each other, and the second package surface conductor extends between and electrically couples a second set of pads that are exposed at the package surface; and coupling a intra-conductor insulating structure between the first and second package surface conductors along an entirety of the first and second elongated portions of the first and second package surface conductors, wherein the intra-conductor insulating structure is configured to electrically insulate the first and second elongated portions of the first and second package surface conductors from each other; stacking a first microelectronic package that has a first sidewall on a second microelectronic package that has a second sidewall, wherein the first microelectronic package includes an embedded first microelectronic device that is electrically coupled with a first sidewall pad of the first set of pads, and the second microelectronic package includes an embedded second microelectronic device that is electrically coupled with a second sidewall pad of the first set of pads.

14. The method of claim 13 , wherein coupling the first and second package surface conductors to the package surface comprises dispensing one or more conductive materials on the package surface using one or more dispensing methods selected from spraying, inkjet printing, aerosol jet printing, stencil printing, and needle dispense.

15. The method of claim 14 , wherein the one or more conductive materials are selected from an electrically conductive adhesive, conductive polymer, a polymer filled with conductive particles, a metal alloy, metal coated organic particles, metal coated ceramic particles, solder paste, solder-filled adhesive, nanoparticle-filled ink, a liquid metal, a metal-containing adhesive, a metal-containing epoxies, electrically-conductive pastes, indium, and bismuth.

16. The method of claim 13 , wherein coupling the intra-conductor insulating structure to the package surface comprises dispensing one or more non conductive materials on the package surface using one or more dispensing methods selected from spraying, inkjet printing, aerosol jet printing, stencil printing, and needle dispense.

17. The method of claim 16 , wherein the one or more non-conductive materials are selected from an epoxy, silicone, a cyanide ester, acrylic, and a polymer adhesive.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PCT NUMBERS IB2013000664, US2013051970, US201305935 PREVIOUSLY RECORDED AT REEL: 037444 FRAME: 0787. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Oct 17, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 040450/0715 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0787 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0874 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2014
From: VINCENT, MICHAEL B.; GONG, ZHIWEI
To: FREESCALE SEMICONDUCTOR, INC.
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 13, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 13, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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