Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

1. A method comprising:

accessing a workpiece object, the workpiece object including a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer, the integrated circuit substrate including a device layer having semiconductor devices;

etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop;

forming TSVs by introducing one or more conductive materials into the TSV openings;

etching a die singulation trench at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die; and

at least substantially releasing the integrated circuit die from the mechanical support substrate.

2. The method of claim 1 , wherein at least substantially releasing the integrated circuit die comprises etching the release layer between the integrated circuit die and the mechanical support substrate.

3. The method of claim 2 , wherein etching the release layer comprises exposing a hermetic passivation and protection layer on the release layer.

4. The method of claim 2 , wherein etching the release layer comprises providing access by an etchant to the release layer through a plurality of openings defined through the mechanical support substrate.

5. The method of claim 1 , wherein etching the TSV openings comprises etching TSV openings that have a diameter of less than 1 μm through a thickness of the integrated circuit substrate that is no more than 25 μm.

6. The method of claim 5 , wherein etching the TSV openings comprises etching TSV openings that have a diameter ranging from 0.1 μm to 0.8 μm and a pitch that ranges from 1 μm to 8 μm through a thickness of the integrated circuit substrate that is no more than 25 μm.

7. The method of claim 1 , wherein etching the die singulation trench comprises etching the die singulation trench with at least one of a reactive ion etch and a deep reactive ion etch.

8. The method of claim 1 , wherein etching the TSV openings comprises etching the TSV openings with at least one of a reactive ion etch and a deep reactive ion etch.

9. The method of claim 1 , wherein etching the die singulation trench comprises etching the die singulation trench in a shape selected from a triangular shape, a pentagonal shape, a hexagonal shape, an octagonal shape, a circular shape, an oval shape, a semi-circular shape, and an irregular shape.

10. The method of claim 1 , further comprising:

separating the integrated circuit die from the mechanical support substrate;

stacking the integrated circuit die vertically relative to a second integrated circuit die; and

electrically coupling the TSVs of the integrated circuit die with interconnects of the second integrated circuit die.

11. The method of claim 10 , wherein separating the integrated circuit die from the mechanical support substrate comprises breaking an anchor used to couple the integrated circuit die with the mechanical support substrate.

12. The method of claim 10 , wherein separating the integrated circuit die from the mechanical support substrate comprises:

contacting a receiving substrate with a plurality of integrated circuit die including the integrated circuit die; and

separating the receiving substrate and the plurality of integrated circuit die from the mechanical support substrate.

13. The method of claim 1 , further comprising, prior to accessing the workpiece object:

coupling the integrated circuit substrate over the release layer, wherein a thickness of the integrated circuit substrate is no more than 25 μm.

14. The method of claim 1 , further comprising:

separating the integrated circuit die from the mechanical support substrate; and

forming a layer over the mechanical support substrate.