IP Library Granted Patent US 9,088,280
Granted Patent B2
US 9,088,280 · App. 14/067,320 · Granted Jul 21, 2015

Body bias control circuit

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Quick Facts
Patent No.
US 9,088,280
App. No.
14/067,320
Granted
Jul 21, 2015
Kind
B2
Abstract

A body bias control circuit including an output coupled to provide a bias voltage to a body terminal. The body bias control circuit is configured to change the bias voltage from a first bias voltage to a second bias voltage over a period of time in which a magnitude of an effective rate of change of the bias voltage varies over the period of time. For voltages between the first and second bias voltages closer to a source voltage, the magnitude of the effective rate of change is smaller than for bias voltages between the first and second bias voltages further from the source voltage.

Claims (32)

1. A circuit, comprising:

a transistor including a body terminal coupled to receive a bias voltage, and a source terminal coupled to receive a source voltage; and

a body bias control circuit including an output coupled to provide the bias voltage to the body terminal, wherein the body bias control circuit is configured to change the bias voltage from a first bias voltage to a second bias voltage over a period of time in which a magnitude of an effective rate of change of the bias voltage varies over the period of time wherein for bias voltages between the first and second bias voltages closer to the source voltage, the magnitude of the effective rate of change is smaller than for bias voltages between the first and second bias voltages further from the source voltage.

2. The circuit of claim 1 , wherein the magnitude of the effective rate of change of the bias voltage increases over the period of time.

3. The circuit of claim 1 , wherein a moving average of the bias voltage changes in a quadratic manner over the period of time.

4. The circuit of claim 1 , wherein the transistor is an n-type transistor formed in a Pwell, and the second bias voltage is less than the first bias voltage.

5. The circuit of claim 1 , wherein the transistor is a p-type transistor formed in an Nwell, and the second bias voltage is greater than the first bias voltage.

6. The circuit of claim 1 , wherein the body bias control circuit is configured to change the bias voltage from the first bias voltage to the second bias voltage by applying at the output, each for a corresponding time duration, a series of bias target level voltages in between the first bias voltage and the second bias voltage.

7. The circuit of claim 6 , wherein each corresponding time duration is a same time duration.

8. The circuit of claim 6 , wherein the body bias control circuit comprises a charge pump used for pulling the output towards each of the series of bias target level voltages and the second bias voltage.

9. The circuit of claim 6 , wherein the body bias control circuit comprises:

a plurality of taps, each tap of the plurality corresponding to a bias target level voltage of the series of bias target level voltages, and

a tap controller configured to select taps of the plurality of taps, for changing the bias voltage from the first bias voltage to the second bias voltage.

10. The circuit of claim 1 wherein the body bias control circuit is configured to change the bias voltage from the second bias voltage to the first bias voltage over a second period of time in which a magnitude of a second effective rate of change of the bias voltage varies over the second period of time wherein for the bias voltages between the second and first bias voltages closer to the source voltage, the magnitude of the second effective rate of change is smaller than for the bias voltages between the second and first bias voltages further from the source voltage.

11. A method for controlling a body bias voltage, comprising:

providing a bias voltage to a body terminal of a transistor and a source voltage to a source terminal of the transistor;

changing the bias voltage from a first bias voltage to a second bias voltage over a period of time in which a magnitude of an effective rate of change of the bias voltage varies over the period of time, wherein for bias voltages between the first and second bias voltages closer to the source voltage, the magnitude of the effective rate of change is smaller than for bias voltages between the first and second bias voltages further from the source voltage.

12. The method of claim 11 , wherein the changing the bias voltage from the first bias voltage to the second bias voltage is performed such that the magnitude of the effective rate of change of the bias voltage increases over the period of time.

13. The method of claim 11 , wherein the changing the bias voltage from the first bias voltage to the second bias voltage is performed such that a moving average of the bias voltage changes in a quadratic manner over the period of time.

14. The method of claim 11 , wherein the transistor is an n-type transistor formed in a P well, and the second bias voltage is less than the first bias voltage.

15. The method of claim 11 , wherein the transistor is a p-type transistor formed in an Nwell, and the second bias voltage is greater than the first bias voltage.

16. The method of claim 11 further comprising:

changing the bias voltage from the second bias voltage to the first bias voltage over a second period of time in which a magnitude of a second effective rate of change of the bias voltage varies over the second period of time, wherein for the bias voltages between the second and first bias voltages closer to the source voltage, the magnitude of the second effective rate of change is smaller than for the bias voltages between the second and first bias voltages further from the source voltage.

17. A circuit, comprising:

a transistor including a body terminal coupled to receive a bias voltage, and a source terminal coupled to receive a source voltage; and

a body bias control circuit including an output coupled to provide the bias voltage to the body terminal, wherein the body bias control circuit is configured to sequentially step at different target levels, the bias voltage from a starting bias voltage to an ending bias voltage over a period of time in which voltage step sizes between the different target levels vary over the period of time, wherein a voltage step size between target levels closer to the source voltage is smaller than a voltage step size between target levels further from the source voltage.

18. The circuit of claim 17 , wherein a size of each voltage step between the target levels increases over the period of time.

19. The circuit of claim 17 , wherein a size of each voltage step between the target levels varies in a quadratic manner over the period of time.

20. The circuit of claim 17 , wherein the body bias control circuit comprises:

a charge pump;

a plurality of taps coupled to the charge pump, each tap of the plurality of taps corresponding to a target level of the different target levels of the bias voltage; and

a tap controller configured to select a tap of the plurality of taps corresponding to a target level of the different target levels.

Assignments (22)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 28, 2025
From: NXP USA, INC.
To: ASCALE TECHNOLOGIES LLC
Reel/Frame 070026/0838 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
MERGER Recorded Jan 3, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041144/0363 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE FILING AND REMOVE APPL. NO. 14085520 REPLACE IT WITH 14086520 PREVIOUSLY RECORDED AT REEL: 037515 FRAME: 0390. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Mar 1, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037926/0642 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT APPL. NO. 14/085,520 PREVIOUSLY RECORDED AT REEL: 037515 FRAME: 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037879/0581 →
CORRECTIVE ASSIGNMENT OF INCORRECT NUMBER 14085520 PREVIOUSLY RECORDED AT REEL: 037458 FRAME: 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTON OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037785/0568 →
CORRECTIVE ASSIGNMENT OF INCORRECT APPL. NO. 14/085,520 PREVIOUSLY RECORDED AT REEL: 037515 FRAME: 0390. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037792/0227 →
CORRECTIVE ASSIGNMENT OF INCORRECT PATENT APPLICATION NUMBER 14085520 ,PREVIOUSLY RECORDED AT REEL: 037458 FRAME: 0399. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037785/0454 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED ON REEL 037458 FRAME 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Jan 14, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037515/0420 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED ON REEL 037458 FRAME 0399. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Jan 14, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037515/0390 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FOUNDING, INC.
Reel/Frame 037458/0399 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FOUNDING, INC.
Reel/Frame 037458/0420 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0790 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 13, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 032445/0493 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 13, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 032445/0577 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 13, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., COLLATERAL AGENT
Reel/Frame 032445/0689 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2014
From: JARRAR, ANIS M.; PIETRI, STEFANO
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 031943/0201 →