Display device and manufacturing method thereof
It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask.
1. A display device comprising:
a gate electrode over a surface of a substrate,
a semiconductor film;
a gate insulating film between the gate electrode and the semiconductor film;
a pixel electrode electrically connected to the semiconductor film;
a metal film over and in contact with the pixel electrode; and
an insulating film over the pixel electrode and the metal film;
wherein the pixel electrode comprises a transparent conductive film,
wherein a region of a side of the pixel electrode has a first angle with respect to the surface of the substrate,
wherein a region of a side of the metal film has a second angle with respect to the surface of the substrate,
wherein the first angle and the second angle are different from each other, and
wherein the region of the side of the metal film is covered by the insulating film.
2. The display device according to claim 1 , wherein the pixel electrode is interposed between the semiconductor film and the metal film.
3. The display device according to claim 1 , wherein the gate insulating film has a stacked structure including a silicon nitride film.
4. The display device according to claim 1 , further comprising a semiconductor film containing impurity between the semiconductor film and the metal film.
5. The display device according to claim 1 , wherein the first angle is larger than the second angle.
6. The display device according to claim 1 , wherein the metal film comprises at least one of Ti, Mo, Ta, Cr, W and Al.
7. An electronic device comprising:
the display device according to claim 1 ;
a speaker;
a microphone; and
a switch.
8. A display device comprising:
a gate electrode over a surface of a substrate;
a gate insulating film over the gate electrode;
a semiconductor film over the gate insulating film;
a pixel electrode electrically connected to the semiconductor film;
a metal film over and in contact with the pixel electrode; and
a common electrode over the pixel electrode,
wherein the pixel electrode comprises a transparent conductive film,
wherein the pixel electrode is over and in contact with the gate insulating film,
wherein a region of a side of the pixel electrode has a first angle with respect to the surface of the substrate,
wherein a region of a side of the metal film has a second angle with respect to the surface of the substrate, and
wherein the first angle and the second angle are different from each other.
9. The display device according to claim 8 , wherein the pixel electrode is interposed between the semiconductor film and the metal film.
10. The display device according to claim 8 , wherein the gate insulating film has a stacked structure including a silicon nitride film.
11. The display device according to claim 8 , further comprising a semiconductor film containing impurity between the semiconductor film and the metal film.
12. The display device according to claim 8 , wherein the first angle is larger than the second angle.
13. The display device according to claim 8 , wherein the metal film comprises at least one of Ti, Mo, Ta, Cr, W and Al.
14. An electronic device comprising:
the display device according to claim 8 ;
a speaker;
a microphone; and
a switch.