Granted Patent B1

US 9,012,263 · App. 14/069,103 · Granted Apr 21, 2015

Abstract

Claims (43)

1. A method of making a packaged device having a substrate, a copper bond pad on the substrate, and a semiconductor die, comprising:

preparing a top surface of the copper bond pad by removing copper oxide from the top surface;

applying a solution to the top surface to result in a treated top surface of the bond pad, wherein the solution comprises one of a group consisting of 1-Hydroxyethylidene-1, 1-Diphosphonic Acid (HEDP) and an HEDP alkyl derivative;

attaching the semiconductor die to the substrate; and

attaching a wirebond connection between the treated bond pad and the semiconductor die.

2. The method of claim 1 , wherein:

the applying the solution comprises dipping the substrate in a bath containing the solution.

3. The method of claim 1 , wherein:

the applying the solution comprises spraying the solution on the treated top surface.

4. The method of claim 1 , wherein:

the applying the solution is a self limiting process by which a protective layer is formed having a thickness that is self-limited.

5. The method of claim 1 , wherein:

the applying the solution is further characterized by the solution further comprising a surfactant.

6. The method of claim 5 , wherein:

the applying the solution is further characterized by the surfactant being non-ionic.

7. The method of claim 5 , wherein:

the applying the solution is further characterized by the surfactant comprising polyethylene glycol.

8. The method of claim 1 , wherein:

the applying the solution is further characterized by the solution further comprising a pH changing agent.

9. The method of claim 8 , wherein:

the applying the solution is further characterized by the pH changing agent comprising an acid or an alkaline substance.

10. The method of claim 1 , wherein the preparing the top surface comprises:

performing a clean of the top surface; and

removing the copper oxide using an etchant.

11. The method of claim 10 , wherein the removing the copper oxide using an etchant comprises using an acid as the etchant.

12. The method of claim 10 , wherein the removing the copper oxide using an etchant comprises using one of a group consisting of citric acid and malic acid.

13. A method of making a packaged device, comprising:

obtaining a substrate having a copper bond pad having a remnant of one of a group consisting of 1-Hydroxyethylidene-1, 1-Diphosphonic Acid (HEDP) and an HEDP derivative on a top surface of the copper bond pad;

attaching a semiconductor die to the substrate; and

attaching a wirebond connection between the remnant and the semiconductor die.

14. The method of claim 13 , wherein the attaching the wirebond connection is further characterized by the wirebond connection comprising a stitch bond contacting the bond pad through the remnant.

15. The method of claim 13 , wherein the obtaining the substrate is further characterized by the remnant being a monolayer.

16. A method of making a package substrate having a copper bond pad and a location for receiving a semiconductor die, comprising:

preparing a top surface of the copper bond pad by removing copper oxide from the top surface; and

applying a solution to the top surface to result in a treated top surface of the bond pad, wherein the solution comprises one of a group consisting of 1-Hydroxyethylidene-1, 1-Diphosphonic Acid (HEDP) and an HEDP alkyl derivative.

17. The method of claim 16 , wherein:

the applying the solution comprises dipping the substrate in a bath containing the solution.

18. The method of claim 16 , wherein:

the applying the solution comprises spraying the solution on the treated top surface.

19. The method of claim 16 , wherein:

the applying the solution is a self limiting process by which a protective layer is formed having a thickness that is self-limited.

20. The method of claim 16 , wherein:

the applying the solution is further characterized by the solution further comprising a surfactant.

Assignments (22)