Sensor protective coating
View Patent ↗A method of fabricating a sensor device includes forming a plurality of sensor structures on a wafer, covering the plurality of sensor structures with a polymer layer, and dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer.
1. A method of fabricating a sensor device, the method comprising:
forming a plurality of sensor structures on a wafer;
covering the plurality of sensor structures with a polymer layer;
dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer; and
removing at least part of the polymer layer from each die after dicing the wafer.
2. The method of claim 1 , wherein:
forming the plurality of sensor structures comprises forming a bond pad on the wafer for each die; and
covering the plurality of sensor structures comprises patterning the polymer layer such that the polymer layer does not cover the bond pad for each die.
3. The method of claim 1 , wherein covering the plurality of sensor structures comprises patterning the polymer layer such that scribe lines along which the wafer is diced are not covered by the polymer layer.
4. The method of claim 1 , wherein the polymer layer comprises a photoresist material.
5. The method of claim 1 , wherein the polymer layer comprises a parylene material or a polyimide material.
6. The method of claim 1 , wherein removing at least part of the polymer layer comprises performing an oxygen plasma ash etch process.
7. The method of claim 1 , further comprising implementing a wire bonding procedure before removing the polymer layer.
8. The method of claim 1 , wherein removing at least part of the polymer layer comprises implementing an etch procedure after dicing the wafer, the etch procedure being configured to reduce a thickness of the polymer layer.
9. The method of claim 1 , further comprising implementing a gel coating procedure after removing the polymer layer.
10. The method of claim 1 , wherein:
forming the plurality of sensor structures comprises forming a membrane for each die spaced from the wafer; and
covering the plurality of sensor structures comprises coating the membrane with the polymer layer.
11. The method of claim 10 , wherein forming the plurality of sensor structures comprises releasing the membrane from a substrate before covering the plurality of sensor structures with the polymer layer.
12. The method of claim 11 , wherein forming the plurality of sensor structures comprises depositing a dielectric layer to seal a space between the released membrane of each sensor structure and the wafer.
13. A method of fabricating a sensor device, the method comprising:
forming a plurality of microelectromechanical system (MEMS) sensors on a wafer, each MEMS sensor comprising a membrane;
covering the plurality of MEMS sensors with a polymer layer;
patterning the polymer layer;
dicing the wafer into a plurality of die while each membrane remains covered by the patterned polymer layer; and
removing at least part of the polymer layer from each die after dicing the wafer.
14. The method of claim 13 , wherein:
each MEMS sensor comprises a bond pad on the wafer; and
patterning the polymer layer comprises removing the polymer layer from the bond pad of each MEMS sensor.
15. The method of claim 13 , wherein patterning the polymer layer comprises removing the polymer layer from scribe lines along which the wafer is diced.
16. The method of claim 13 , wherein the polymer layer comprises a photoresist material.
17. The method of claim 13 , wherein removing at least part of the polymer layer comprises performing an oxygen plasma ash etch process.
18. The method of claim 13 , further comprising implementing a wire bonding procedure before removing the polymer layer.
19. The method of claim 13 , wherein forming the plurality of MEMS sensors comprises releasing the membrane from a substrate before covering the plurality of MEMS sensors with the polymer layer such that the membrane is suspended from the substrate.
20. The method of claim 13 , wherein removing at least part of the polymer layer comprises implementing an etch procedure after dicing the wafer, the etch procedure being configured to reduce a thickness of the polymer layer.