Memory cells and methods of forming memory cells
Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.
1. A memory cell, comprising:
a first metal comprising electrode;
a switching material over and directly against the first metal-comprising electrode, the switching material comprising one or more of an oxide material and a chalcogenide-type material;
a buffer region over the switching material;
an ion reservoir material over the buffer region, the buffer region comprising one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements; and
a second metal-comprising electrode over the buffer region.
2. The memory cell of claim 1 wherein the elements from Group 14 of the periodic table are present in the buffer region to a total concentration within a range of from about 5 atomic percent to about 25 atomic percent.
3. The memory cell of claim 1 wherein the elements from Group 14 of the periodic table are present in the buffer region to a total concentration within a range of from about 10 atomic percent to about 15 atomic percent.
4. The memory cell of claim 1 wherein the buffer region has a thickness within a range of from about 20 angstroms to about 100 angstroms.
5. The memory cell of claim 1 wherein the chalcogen elements within the buffer region comprise tellurium.
6. The memory cell of claim 1 wherein the chalcogen elements within the buffer region comprise sulfur.
7. The memory cell of claim 1 wherein the chalcogen elements within the buffer region comprise selenium.
8. The memory cell of claim 1 wherein more than 50atomic percent of the buffer region corresponds to one or more tellurides selected from the group consisting of aluminum telluride, hafnium telluride and zirconium telluride.
9. The memory cell of claim 1 wherein the buffer region comprises a laminate containing layers that comprise Group 14 elements alternating with layers that do not comprise Group 14 elements.
10. The memory cell of claim 1 wherein the buffer region comprises a gradient of Group 14 element concentration, with the concentration being highest along an interface with the ion reservoir material.
11. A memory cell, comprising:
a metal-comprising electrode;
a switching material over and directly against the metal-comprising electrode, the switching material comprising one or more of an oxide material and a chalcogenide-type material;
a buffer region over the switching material;
an ion reservoir material over the switching material;
wherein the switching material comprises aluminum oxide;
wherein the ion reservoir material comprises one or more tellurides in combination with one or more of aluminum, copper and silver;
wherein the buffer region comprises one or more tellurides selected from the group consisting of aluminum telluride, hafnium telluride and zirconium telluride; and
wherein the buffer region comprises one or more elements from Group 14 of the periodic table to a total concentration within a range of from about 5 atomic percent to about 25 atomic percent.
12. The memory cell of claim 11 wherein the elements from Group 14 of the periodic table are present in the buffer region to a total concentration within a range of from about 10 atomic percent to about 15 atomic percent.
13. The memory cell of claim 11 wherein the elements from Group 14 of the periodic table within the buffer region include carbon.
14. The memory cell of claim 11 wherein the elements from Group 14 of the periodic table within the buffer region include silicon.
15. The memory cell of claim 11 wherein the elements from Group 14 of the periodic table within the buffer region include germanium.
16. The memory cell of claim 11 wherein the elements from Group 14 of the periodic table within the buffer region include tin.
17. The memory cell of claim 11 wherein the one or more tellurides consist of aluminum telluride.
18. The memory cell of claim 11 wherein the one or more tellurides consist of hafnium telluride.
19. The memory cell of claim 11 wherein the one or more tellurides consist of zirconium telluride.
20. The memory cell of claim 11 wherein the buffer region comprises a laminate containing layers that comprise Group 14 elements alternating with layers that do not comprise Group 14 elements.
21. The memory cell of claim 11 wherein the buffer region comprises a gradient of Group 14 element concentration, with the concentration being highest along an interface with the ion reservoir material.
22. A method of forming a memory cell, comprising:
forming a switching material over and directly against a first metal-comprising electrode, the switching material comprising one or more of an oxide material and a chalcogenide-type material;
forming a buffer region over the switching material; wherein the buffer region comprises one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements; wherein the forming of the buffer region comprises forming a laminate containing layers that comprise Group 14 elements alternating with layers that do not comprise Group 14 elements;
forming an ion reservoir material over the buffer region; and
forming a second metal-comprising electrode over the ion reservoir material.
23. The method of claim 22 wherein the elements from Group 14 of the periodic table are present in the buffer region to a total concentration within a range of from about 5 atomic percent to about 25 atomic percent.
24. The method of claim 22 wherein the elements from Group 14 of the periodic table are present in the buffer region to a total concentration within a range of from about 10 atomic percent to about 15 atomic percent.
25. The method of claim 22 wherein the buffer region has a thickness within a range of from about 20 angstroms to about 100 angstroms.
26. The method of claim 22 wherein the chalcogen elements within the buffer region comprise tellurium.
27. The method of claim 22 wherein the chalcogen elements within the buffer region comprise selenium.
28. The method of claim 22 wherein the chalcogen elements within the buffer region comprise sulfur.
29. The method of claim 22 further comprising treating the buffer region to disperse the one or more elements from Group 14 of the periodic table substantially uniformly throughout the buffer region to thereby convert the laminate into a substantially homogeneous material.