Semiconductor device connected by anisotropic conductive film
A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.
1. A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film:
having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film by heating and compression at 190° C. and 30 MPa for 15 minutes,
having a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film, and
including (A) a thermoplastic resin; (B) a first radical polymerizable material; (C) a second radical polymerizable material; (D) silica; and (E) an organic peroxide, wherein a ratio (B+C)/(A+D) of sum (B+C) of weight of the (B) first radical polymerizable material in terms of solid content and a weight of the (C) second radical polymerizable material in terms of solid content to a sum (A+D) of a weight of the (A) thermoplastic resin in terms of solid content and a weight of the (D) silica in terms of solid content ranges from 0.20 to 0.45.
2. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film has a primary compression temperature of 120° C. to 200° C.
3. The semiconductor device as claimed in claim 1 , wherein the semiconductor device includes a chip-on-flex and a printed circuit board, and the anisotropic conductive film bonds the chip-on-flex to the printed circuit board.
4. The semiconductor device as claimed in claim 1 , wherein the thermoplastic resin includes one or more of an acrylonitrile butadiene copolymer, an acrylate modified urethane resin, or an acryl copolymer.
5. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film further includes conductive particles.
6. A semiconductor device connected by an anisotropic conductive film composition, the composition comprising: (A) a thermoplastic resin; (B) a first radical polymerizable material; (C) a second radical polymerizable material; (D) silica; (E) an organic peroxide; and (F) conductive particles, wherein a ratio (B+C)/(A+D) of a sum (B+C) of a weight of the (B) first radical polymerizable material in terms of solid content and a weight of the (C) second radical polymerizable material in terms of solid content to a sum (A+D) of a weight of the (A) thermoplastic resin in terms of solid content and a weight of the (D) silica in terms of solid content ranges from 0.20 to 0.45.
7. The semiconductor device as claimed in claim 6 , wherein the thermoplastic resin includes one or more of an acrylonitrile butadiene copolymer, an acrylate modified urethane resin, or an acryl copolymer.
8. The semiconductor device as claimed in claim 7 , wherein the acryl copolymer is present in an amount of 8 wt % to 20 wt % based on the total weight of the composition in terms of solid content.
9. The semiconductor device as claimed in claim 6 , wherein the silica is present in an amount of 3 wt % to 8 wt % based on the total weight of the composition in terms of solid content.
10. The semiconductor device as claimed in claim 6 , wherein the composition further comprises titanium dioxide.
11. A semiconductor device, comprising:
a first connecting member having a first electrode;
a second connecting member having a second electrode; and
an anisotropic conductive film placed between the first connecting member and the second connecting member and connecting the first electrode to the second electrode, wherein the anisotropic conductive film:
has a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film by heating and compression at 190° C. and 30 MPa for 15 minutes,
has a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film, and
includes (A) a thermoplastic resin; (B) a first radical polumerizable material; (C) a second radical polymerizable material; (D) silica; and (E) an organic peroxide, wherein a ration (B+C)/(A+D) of a sum (B+C) of a weight of the (B) first radical polymerizable material in terms of solid content and a weight of the (C) second radical polymerizable material in terms of solid content to a sum (A+D) of a weight of the (A) thermoplastic resin in terms of solid content and a weight of the (D) silica in terms of solid content ranges form 0.20 to 0.45.