Semiconductor IC packaging methods and structures
An IC packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a metal pad and an insulating layer and the insulating layer has an opening to expose the meal pad. The method also includes forming an under-the-ball meal electrode on the exposed metal pad. The under-the-ball metal electrode has an electrode body and an electrode tail, the electrode body is located at a bottom portion of the under-the-ball metal electrode and is in contact with the metal pad, and the electrode tail is located at a top portion of the under-the-ball meal electrode. Further, the method includes forming a solder ball on the under-the-ball metal electrode.
1. A semiconductor IC packaging method, comprising:
providing a semiconductor substrate having a metal pad and a transition metal layer, and an insulating layer with an opening to expose one of a surface of the metal pad and a surface of the transition metal layer;
forming an under-the-ball metal electrode having an electrode body and an electrode tail on the one of the surface of the metal pad and the surface of the transition metal layer, wherein the electrode body is located at a bottom portion of the under-the-ball metal electrode to be in contact with the one of the surface of the metal pad and the surface of the transition metal layer and the electrode tail is located at a top portion of the under-the-ball metal electrode; and
forming a solder ball to cover at least the electrode tail of the under-the-ball metal electrode, wherein forming the under-the-ball metal electrode includes:
forming the electrode body by bonding a metal wire onto the one of the surface of the metal pad and the surface of the transition metal layer,
forming a wire arc by the metal wire to a height of the electrode tail, and
cutting the metal wire to form the under-the-ball metal electrode, wherein
a height of the electrode tail is approximately 0.005 to 1.5 times of a height of the electrode body; and
before forming the solder ball, forming a coating layer having a diffusion preventing layer and a wetting layer on a surface of the under-the-ball metal electrode between the under-the-ball metal electrode and the solder ball, wherein the diffusion preventing layer is formed on the surface of the under-the-ball metal electrode and portions of the one of the surface of the metal pad and the surface of the transition metal layer and the wetting layer is formed to cover the diffusion preventing layer, the diffusion preventing layer and the wetting layer are in contact with sidewalls of the opening of the insulating layer.
2. The semiconductor IC packaging method according to claim 1 , wherein:
the diffusion preventing layer is a nickel plating layer formed by an electroless plating with a thickness of approximately 0.1 μm to 3 μm.
3. The semiconductor IC packaging method according to claim 1 , wherein:
the wetting layer is formed by chemical plating and has a thickness of approximately 0.05 μm to 10 μm.
4. The semiconductor IC packaging method according to claim 1 , wherein:
the insulating layer includes a passivation layer and a polymer layer;
the passivation layer is made of silicon oxide, silicon nitride, and a combination of silicon oxide and silicon nitride; and
the polymer layer is made of Polyimide, Epoxy, Benzocyclobutene, and a combination thereof.
5. The semiconductor IC packaging method according to claim 1 , wherein:
the solder ball is made of tin or tin alloy through a printing process.
6. The semiconductor IC packaging method according to claim 1 , wherein:
the metal pad is a redistributed pad.
7. A semiconductor IC packaging structure, comprising:
a semiconductor substrate having a metal pad and a transition metal layer;
an insulating layer formed on the semiconductor substrate with an opening to expose one of a surface of the metal pad and a surface of the transition metal layer;
an under-the-ball meal electrode with an electrode body and an electrode tail formed on the one of the surface of the metal pad and the surface of the transition metal layer, wherein the electrode body is located at a bottom portion of the under-the-ball metal electrode to be in contact with the one of the surface of the metal pad and the surface of the transition metal layer and the electrode tail is located at a top portion of the under-the-ball metal electrode; and
a solder ball formed to cover at least the electrode tail of the under-the-ball metal electrode, wherein the under-the-ball metal electrode is formed by:
forming the electrode body by bonding a metal wire onto the one of the surface of the metal pad and the surface of the transition metal layer,
forming a wire arc by the metal wire to a height of the electrode tail, and
cutting the metal wire to form the under-the-ball metal electrode, wherein
a height of the electrode tail is approximately 0.005 to 1.5 times of a height of the electrode body; and
a coating layer having a diffusion preventing layer and a wetting layer formed on a surface of the under-the-ball metal electrode between the under-the-ball metal electrode and the solder ball, wherein the diffusion preventing layer is formed on the surface of the under-the-ball metal electrode and portions of the one of the surface of the metal pad and the surface of the transition metal layer and the wetting layer is formed to cover the diffusion preventing layer, the diffusion preventing layer and the wetting layer are in contact with sidewalls of the opening of the insulating layer.
8. The semiconductor IC packaging structure according to claim 7 , wherein:
the diffusion preventing layer is a nickel plating layer formed by an electroless plating process with a thickness of approximately 0.1 μm to 3 μm.
9. The semiconductor IC packaging structure according to claim 7 , wherein:
the wetting layer is formed by chemical plating and has a thickness of approximately 0.05 μm to 10 μm.
10. The semiconductor IC packaging structure according to claim 7 , wherein:
the insulating layer includes a passivation layer and a polymer layer;
the passivation layer is made of silicon oxide, and silicon nitride, and a combination of silicon oxide and silicon nitride;
and the polymer layer is made of Polyimide, Epoxy, Benzocyclobutene, and a combination thereof.
11. The semiconductor IC packaging structure according to claim 7 , wherein:
the solder ball is made of tin or tin alloy through a printing process.
12. The semiconductor IC packaging structure according to claim 7 , wherein:
the metal pad is a redistributed pad.
13. The semiconductor IC packaging method according to claim 1 , wherein:
the transition metal layer has a second opening;
the metal pad fills the second opening; and
an entire top surface of the metal pad is a planar surface.
14. The semiconductor IC packaging method according to claim 1 , wherein:
a cross section of the electrode body of the under-the-ball metal electrode has a trapezoid shape; and
a cross section of the electrode tail of the under-the-ball metal electrode has a rectangle shape.
15. The semiconductor IC packaging structure according to claim 7 , wherein:
the transition metal layer has a second opening;
the metal pad fills the second opening; and
an entire top surface of the metal pad is a planar surface.
16. The semiconductor IC packaging structure according to claim 7 , wherein:
a cross section of the electrode body of the under-the-ball metal electrode has a trapezoid shape; and
a cross section of the electrode tail of the under-the-ball metal electrode has a rectangle shape.