Fast programming memory device
In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one including at least two serially-connected memory cells, groups of at least two memory cells strings being connected to a respective bit line, and wherein said memory cells are adapted to be programmed into at least a first programming state and a second programming state, a method of storing data comprising exploiting a single memory cell for each of the memory cells string for writing the data, wherein said exploiting includes bringing the single memory cell to the second programming state, the remaining memory cells of the string being left in the first programming state.
1. A method comprising:
programming only one non-volatile memory cell within a group of non-volatile memory cells serially coupled between a data node and a source node; and
programming no other memory cell within the group until after the programmed memory cell is read.
2. The method of claim 1 , further comprising programming the one memory cell with a single programming pulse.
3. The method of claim 1 , further comprising programming the one memory cell in anticipation of a circuit transitioning from one operating mode to another operating mode.
4. The method of claim 1 , further comprising erasing the group of non-volatile memory cells before programming the one memory cell.
5. The method of claim 1 , further comprising performing no verification of the state of the one memory cell after programming the cell.
6. A method comprising:
programming with a single pulse a non-volatile memory cell within a group of non-volatile memory cells serially coupled between a data node and a source node; and
performing no verification that the memory cell has a programmed state after programming the cell.
7. The method of claim 6 , wherein programming the non-volatile memory cell is performed such that the non-volatile memory cell has the programmed state different from a state of the remaining non-volatile memory cells in the group of non-volatile memory cells.
8. The method of claim 6 , wherein programming the non-volatile memory cell is performed such that the remaining non-volatile memory cells in the group of non-volatile memory cells remain at an erased state after programming the non-volatile memory cell.
9. The method of claim 6 , further comprising:
applying an equal voltage to all memory cells in the group of non-volatile memory cells to retrieve data from the non-volatile memory cell after programming the non-volatile memory cell.
10. The method of claim 6 , further comprising:
applying a reference voltage to all memory cells in the group of non-volatile memory cells to retrieve data from the non-volatile memory cell after programming the non-volatile memory cell.
11. The method of claim 6 , further comprising:
applying zero volts to all memory cells in the group of non-volatile memory cells to retrieve data from the non-volatile memory cell after programming the non-volatile memory cell.
12. The method of claim 6 , further comprising:
erasing the group of non-volatile memory cells before programming the non-volatile memory cell.
13. A method comprising:
receiving data representing a state of a circuit in anticipation of the circuit transitioning from a first operating mode to a second operating mode; and
storing the data by programming only one non-volatile memory cell within a group of non-volatile memory cells serially coupled between a data node and a source node.
14. The method of claim 13 , further comprising providing the stored data from the one non-volatile memory cell to the circuit in association with the circuit transitioning from the second operating mode to a third operating mode.
15. The method of claim 13 , wherein the second operating mode comprises a sleep mode.
16. The method of claim 13 , wherein the second operating mode comprises a hibernation mode.
17. The method of claim 13 , wherein programming the one non-volatile memory cell includes programming the one non-volatile memory cell with a single programming pulse.
18. The method of claim 13 , wherein programming the one non-volatile memory cell is performed such that the remaining non-volatile memory cells in the group of non-volatile memory cells remain at an erased state after programming the one non-volatile memory cell.
19. The method of claim 13 , further comprising:
applying an equal voltage to all memory cells in the group of non-volatile memory cells to retrieve data from the one non-volatile memory cell after programming the one non-volatile memory cell.
20. The method of claim 13 , further comprising:
erasing the group of non-volatile memory cells before programming the one non-volatile memory cell.