Semiconductor packages having warpage compensation
A semiconductor package can include a substrate body having a first surface and a second surface. A semiconductor chip can be mounted on the first surface and a plurality of electrode pads can be on the second surface and selectively formed to have progressively smaller or larger sizes extending from a central region of the substrate body toward an outer edge of the substrate body based on a reflow soldering process warpage profile for the semiconductor package.
1. A stacked semiconductor package comprising:
a first semiconductor package comprising a substrate body, a semiconductor chip mounted on an upper surface of the substrate body, and first electrode pads formed outside the semiconductor chip on the upper surface of the substrate body;
first external contact electrodes respectively formed on the first electrode pads; and
a second semiconductor package that comprises second electrode pads respectively electrically connected to the first external contact electrodes and is stacked on the first semiconductor package via the first external contact electrodes,
wherein heights of the first external contact electrodes are determined to be different from each other according to a warpage direction of at least one of the first and second semiconductor packages in a soldering temperature range near a melting point of the first external contact electrodes in a heat treatment process for forming the first external contact electrodes.
2. The stacked semiconductor package of claim 1 , wherein at least one selected from the group consisting of sizes of the second electrode pads and volumes of the first external contact electrodes are determined to be different from each other according to the warpage direction of at least one of the first and second semiconductor packages in the soldering temperature range.
3. The stacked semiconductor package of claim 2 , wherein sizes of the first electrode pads are determined to be different from each other according to at least one selected from the group consisting of the volumes of the first external contact electrodes corresponding to the first electrode pads and the sizes of the second electrode pads corresponding to the first electrode pads.
4. The stacked semiconductor package of claim 1 , wherein the substrate body further comprises third electrode pads formed on a lower surface of the substrate body.
5. The stacked semiconductor package of claim 4 , further comprising:
second external contact electrodes respectively formed on the third electrode pads; and
a mother board comprising fourth electrode pads respectively electrically connected to the second external contact electrodes,
wherein at least one selected from the group consisting of heights of the second external contact electrodes and pitches between the third electrode pads are determined to be different from each other according to a warpage direction of the first semiconductor package in a soldering temperature range near a melting point of the second external contact electrodes in a heat treatment process for forming the second external contact electrodes.
6. The stacked semiconductor package of claim 5 , wherein at least one selected from the group consisting of sizes of the third electrode pads and volumes of the second external contact electrodes are determined to be different from each other according to the warpage direction of the first semiconductor package in the soldering temperature range, and correspondingly, the heights of the second external contact electrodes are determined to be different from each other.
7. The stacked semiconductor package of claim 6 , wherein the first semiconductor package further comprises a protection layer that is formed on the lower surface of the substrate body and exposes a portion of each of the third electrode pads, and
sizes of the third electrode pads are sizes of the portions of the third electrode pads exposed by the protection layer.
8. The stacked semiconductor package of claim 6 , wherein the first semiconductor package further comprises a protection layer that is formed on the lower surface of the substrate body and exposes the third electrode pads, and
sizes of the third electrode pads are actual sizes of the third electrode pads.
9. The stacked semiconductor package of claim 5 , wherein sizes of the fourth electrode pads are determined to be different from each other, corresponding to at least one selected from the group consisting of volumes of the second external contact electrodes corresponding to the fourth electrode pads and sizes of the third electrode pads corresponding to the fourth electrode pads.
10. The stacked semiconductor package of claim 5 , wherein pitches between the fourth electrode pads are determined to be different from each other, corresponding to pitches of the third electrode pads corresponding to the fourth electrode pads.
11. The stacked semiconductor package of claim 5 , wherein the first semiconductor package has a positive, that is, concave warpage in the soldering temperature range of the first external contact electrodes.
12. The stacked semiconductor package of claim 11 , wherein pitches of the third electrode pads formed in a central region of the lower surface are narrowed in a direction away from the center of the lower surface, and pitches of the third electrode pads formed in an edge region of the lower surface are identical to each other.
13. The stacked semiconductor package of claim 11 , wherein heights of the second external contact electrodes formed in a central region of the lower surface are smaller than heights of the second external contact electrodes formed in an edge region of the lower surface.
14. The stacked semiconductor package of claim 13 , wherein sizes of the third electrode pads formed in the central region of the lower surface are greater than sizes of the third electrode pads formed in the edge region of the lower surface.
15. The stacked semiconductor package of claim 13 , wherein at least one of the third electrode pads formed in the central region of the lower surface is a dummy pad.
16. The stacked semiconductor package of claim 13 , wherein volumes of the second external contact electrodes formed in the central region of the lower surface are smaller than volumes of the second external contact electrodes formed in the edge region of the lower surface.
17. The stacked semiconductor package of claim 11 , wherein pitches between the third electrode pads are narrowed in a direction away from the center of the lower surface.
18. The stacked semiconductor package of claim 11 , wherein pitches of the third electrode pads formed in a central region of the lower surface are wider than pitches of the third electrode pads formed in an edge region of the lower surface.
19. The stacked semiconductor package of claim 18 , wherein the pitches of the third electrode pads formed in the central region of the lower surface are identical to each other, and the pitches of the third electrode pads formed in the edge region of the lower surface are identical to each other.
20. The stacked semiconductor package of claim 5 , wherein the soldering temperature range is from about 220 degrees Centigrade to about 260 degrees Centigrade.